Hydride vapor phase epitaxy of high quality {1013} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres
- Autor
- JIANKUN YANG1 ; TONGBO WEI1 ; ZIQIANG HUO1 ; QIANG HU1 ; YONGHUI ZHANG1 ; RUIFEI DUAN1 ; JUNXI WANG1
[1] Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China - Fuente
Journal of crystal growth. 2014, Vol 387, pp 101-105, 5 p ; ref : 29 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Campo Científico
- Crystallography; Geology; Metallurgy, welding
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- A3. Hydride vapor phase epitaxy B1. Sapphire B1. Semipolar GaN B2. SiO2 nanospheres
- Palabra clave (fr)
- Autoassemblage Composé III-V Densité défaut Diagramme rotation Diffraction RX Dislocation imparfaite Défaut empilement Effet contrainte Epitaxie phase vapeur Hydrure Morphologie surface Nanosphère Photoluminescence Relaxation Rugosité Saphir Semiconducteur III-V Spectrométrie Raman Structure cristalline 6166 6172N 8115K 8116D GaN Substrat GaN Substrat SiO2 Substrat saphir
- Palabra clave (in)
- Self-assembly III-V compound Defect density Rocking curve XRD Partial dislocation Stacking faults Stress effects VPE Hydrides Surface morphology Nanosphere Photoluminescence Relaxation Roughness Sapphire III-V semiconductors Raman spectroscopy Crystal structure
- Palabra clave (es)
- Compuesto III-V Densidad defecto Diagrama rotación Dislocación imperfecta Nanosfera
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A66 Structure of specific crystalline solids
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72N Stacking faults and other planar or extended defects
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication / 001B80A16D Self-assembly
- Disciplina
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 28113133
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2013.11.003 
https://dx.doi.org/10.1016/j.jcrysgro.2013.11.003
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