Molecular-beam epitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs
- Author
- GONZALEZ-BORRERO, P. P1 ; MAREGA, E. JR1 ; LUBYSHEV, D. I1 ; PETITPREZ, E1 ; BASMAJI, P1
[1] Instituto de Fisica de Sao Carlos, Universidade de Sao Paulo, CP 369, 13960-970 Sao Carlos, SP, Brazil - Conference title
- Molecular Beam Epitaxy
- Conference name
- MBE-IX: International Conference on Molecular Beam Epitaxy (9 ; Malibu, California 1996-08-05)
- Author (monograph)
- KAO, Yung-Chung (Editor)1
[1] Texas Instruments, United States - Source
Journal of crystal growth. 1997, Vol 175-76, pp 765-770 ; 2 ; ref : 16 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Composé binaire Confinement Croissance cristalline en phase vapeur Effet température Epitaxie jet moléculaire Etude expérimentale Hétérojonction Indium arséniure Orientation cristalline Photoluminescence Point quantique Semiconducteur III-V Structure surface As In InAs Composé minéral
- Keyword (en)
- Binary compounds Confinement Crystal growth from vapors Temperature effects Molecular beam epitaxy Experimental study Heterojunctions Indium arsenides Crystal orientation Photoluminescence Quantum dots III-V semiconductors Surface structure Inorganic compounds
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55C Iii-v semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2819635
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(96)01182-7 
https://dx.doi.org/10.1016/S0022-0248(96)01182-7
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