The MBE temperature window for Cd1-xZnxTe (0 ≤ x ≤ 1) compounds grown on 2°-off oriented GaAs(100) substrates : Vapor growth and epitaxy 1996
- Author
- HERMAN, M. A1 ; KOZHUKHOV, A. V1 ; SADOWSKI, J. T1
[1] Institute of Vacuum Technology, 44/50 Dluga Str., 00241 Warsaw, Poland - Conference title
- Vapor growth and epitaxy 1996
- Conference name
- ICVGE-9 : International Conference on Vapor Growth and Epitaxy (9 ; Vail, Colorado 1996-08-04)
- Author (monograph)
- STRINGFELLOW, G. B (Editor)1
[1] University of Utah, Utah, United States - Source
Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 768-774 ; ref : 10 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Adsorption gaz solide Cadmium tellurure Cinétique Composition chimique Composé ternaire Croissance cristalline en phase vapeur Désorption Effet température Epitaxie jet moléculaire Etude expérimentale Mode opératoire Réaction surface Réactivité Semiconducteur II-VI Solution solide Zinc tellurure Cd Te Zn Cd1-xZnxTe Composé minéral Métal transition composé
- Keyword (en)
- Gas solid adsorption Cadmium tellurides Kinetics Chemical composition Ternary compounds Crystal growth from vapors Desorption Temperature effects Molecular beam epitaxy Experimental study Operating mode Surface reactions Reactivity II-VI semiconductors Solid solutions Zinc tellurides Inorganic compounds Transition element compounds
- Keyword (es)
- Adsorción gas sólido Método operatorio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2822584
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(97)00035-3 
https://dx.doi.org/10.1016/S0022-0248(97)00035-3
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