Porous Light-Emitting Diodes With Patterned Sapphire Substrates Realized by High-Voltage Self-Growth and Soft UV Nanoimprint Processes
- Author
- SUN, Tang-You1 ; ZHAO, Wen-Ning1 ; WU, Xing-Hui1 ; LIU, Si-Si1 ; MA, Zhi-Chao1 ; JING PENG2 ; JIAN HE1 ; XU, Hai-Feng1 ; LIU, Shi-Yuan3 ; XU, Zhi-Mou1
[1] Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
[2] College of Sciences, Wuhan University of Science and Technology, Wuhan 430081, China
[3] State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China - Source
Journal of lightwave technology. 2014, Vol 32, Num 1-4, pp 326-332, 7 p ; ref : 40 ref
- CODEN
- JLTEDG
- ISSN
- 0733-8724
- Scientific domain
- Electronics; Optics; Telecommunications
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Light-emitting diode (LED) nanoimprint lithography (NIL) optoelectronics photonic crystal (PC)
- Keyword (fr)
- Anodisation Appareil éclairage Cristal photonique Diminution coût Diode électroluminescente Dispositif état solide Echelle nanométrique Electroluminescence Essai dureté Essai thermique préliminaire Evaluation performance Fabrication microélectronique Haute performance Haute tension Lampe LED Lithographie UV Lumière bleue Matériau poreux Méthode différence finie domaine temps Nanolithographie Photolithographie Photoluminescence Production masse Simulation 4270Q 4272 Lithographie douce Matériau nanostructuré Substrat structuré
- Keyword (en)
- Anodizing Lighting fitting Photonic crystal Cost lowering Light emitting diode Solid state device Nanometer scale Electroluminescence Hardness test Burn in test Performance evaluation Microelectronic fabrication High performance High voltage LED lamps UV lithography Blue light Porous material Finite difference time-domain analysis Nanolithography Photolithography Photoluminescence Mass production Simulation Soft lithography Nanostructured material Patterned substrate
- Keyword (es)
- Anodización Aparato alumbrado Cristal fotónico Reducción costes Diodo electroluminescente Dispositivo estado sólido Electroluminiscencia Ensayo dureza Prueba térmica preliminar Evaluación prestación Fabricación microeléctrica Alto rendimiento Alta tensión Litografía UV Luz azul Material poroso Fotolitografía Fotoluminiscencia Producción en masa Simulación
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B72 Optical sources and standards
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02C Optical and optoelectronic circuits / 001D03G02C2 Integrated optoelectronics. Optoelectronic circuits
- Discipline
- Electronics Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28250507
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/JLT.2013.2293142 
https://dx.doi.org/10.1109/JLT.2013.2293142
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