The building up of terrace periodicity by MBE growth on (0 0 1) GaAs vicinal surfaces
- Author
- LELARGE, F1 ; WANG, Z. Z1 ; CAVANNA, A1 ; LARUELLE, F1 ; ETIENNE, B1
[1] Laboratoire de Microstructures et de Microélectronique, CNRS, B.P. 107, 92225 Bagneux, France - Conference title
- Molecular Beam Epitaxy
- Conference name
- MBE-IX: International Conference on Molecular Beam Epitaxy (9 ; Malibu, California 1996-08-05)
- Author (monograph)
- KAO, Yung-Chung (Editor)1
[1] Texas Instruments, United States - Source
Journal of crystal growth. 1997, Vol 175-76, pp 1102-1107 ; 2 ; ref : 14 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Composé binaire Couche tampon Croissance cristalline en phase vapeur Dopage cristal Epitaxie jet moléculaire Etude expérimentale Gallium arséniure Microscopie force atomique Morphologie Méthode Monte Carlo Semiconducteur III-V Simulation ordinateur Surface vicinale Surface Al As AlAs As Ga GaAs:Si Composé minéral
- Keyword (en)
- Binary compounds Buffer layer Crystal growth from vapors Crystal doping Molecular beam epitaxy Experimental study Gallium arsenides Atomic force microscopy Morphology Monte Carlo method III-V semiconductors Computerized simulation Vicinal surface Surfaces Inorganic compounds
- Keyword (es)
- Capa tampón
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2825338
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(96)00910-4 
https://dx.doi.org/10.1016/S0022-0248(96)00910-4
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