A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs
- Author
- SANTARELLI, Alberto1 ; CIGNANI, Rafael1 ; GIBIINO, Gian Piero1 2 ; NIESSEN, Daniel1 ; TRAVERSO, Pier Andrea1 ; FLORIAN, Corrado1 ; SCHREURS, Dominique M. M. -P2 ; FILICORI, Fabio1
[1] Department of Electrical, Electronic and Information Engineering Guglielmo Marconi (DEI), University of Bologna, Bologna 40136, Italy
[2] Div. ESAT-TELEMIC, KU Leuven, Leuven 3001, Belgium - Source
IEEE microwave and wireless components letters. 2014, Vol 24, Num 2, pp 132-134, 3 p ; ref : 8 ref
- ISSN
- 1531-1309
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Electrothermal effects energy states field effect transistors (FETs) gallium nitride pulse measurements
- Keyword (fr)
- Caractéristique courant tension Condition isotherme Effet non linéaire Electrothermie Forme onde Mesure Méthode dynamique Nitrure de gallium Piégeage porteur charge Transistor effet champ Rapport cyclique
- Keyword (en)
- Voltage current curve Isothermal condition Non linear effect Electrothermics Waveform Measurement Dynamic method Gallium nitride Charge carrier trapping Field effect transistor Duty cycle
- Keyword (es)
- Característica corriente tensión Condición isoterma Efecto no lineal Electrotermia Forma onda Medida Método dinámico Galio nitruro Captura portador carga Transistor efecto campo Ciclo de trabajo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20J Charge carriers: generation, recombination, lifetime, and trapping
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28271084
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LMWC.2013.2290216 
https://dx.doi.org/10.1109/LMWC.2013.2290216
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1109\/LMWC.2013.2290216\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:73:\"A Double-Pulse Technique for the Dynamic I\/V Characterization of GaN FETs\";s:9:\"\u0000*\u0000jtitle\";s:46:\"IEEE microwave and wireless components letters\";s:9:\"\u0000*\u0000stitle\";s:32:\"IEEE microw. wirel. compon. lett\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:2:\"24\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"132\";s:8:\"\u0000*\u0000epage\";s:3:\"134\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1531-1309\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"SANTARELLI\";s:10:\"\u0000*\u0000aufirst\";s:7:\"Alberto\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:15:\"CIGNANI, Rafael\";i:1;s:19:\"GIBIINO, Gian Piero\";i:2;s:15:\"NIESSEN, Daniel\";i:3;s:21:\"TRAVERSO, Pier Andrea\";i:4;s:16:\"FLORIAN, Corrado\";i:5;s:28:\"SCHREURS, Dominique M. M. -P\";i:6;s:15:\"FILICORI, Fabio\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:73:\"A Double-Pulse Technique for the Dynamic I\/V Characterization of GaN FETs\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"3\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1109\/LMWC.2013.2290216\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:73:\"A Double-Pulse Technique for the Dynamic I\/V Characterization of GaN FETs\";s:9:\"\u0000*\u0000jtitle\";s:46:\"IEEE microwave and wireless components letters\";s:9:\"\u0000*\u0000stitle\";s:32:\"IEEE microw. wirel. compon. lett\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:2:\"24\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"132\";s:8:\"\u0000*\u0000epage\";s:3:\"134\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1531-1309\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"SANTARELLI\";s:10:\"\u0000*\u0000aufirst\";s:7:\"Alberto\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:15:\"CIGNANI, Rafael\";i:1;s:19:\"GIBIINO, Gian Piero\";i:2;s:15:\"NIESSEN, Daniel\";i:3;s:21:\"TRAVERSO, Pier Andrea\";i:4;s:16:\"FLORIAN, Corrado\";i:5;s:28:\"SCHREURS, Dominique M. M. -P\";i:6;s:15:\"FILICORI, Fabio\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:73:\"A Double-Pulse Technique for the Dynamic I\/V Characterization of GaN FETs\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"3\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1109\/LMWC.2013.2290216\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1109\/LMWC.2013.2290216\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:73:\"A Double-Pulse Technique for the Dynamic I\/V Characterization of GaN FETs\";s:9:\"\u0000*\u0000jtitle\";s:46:\"IEEE microwave and wireless components letters\";s:9:\"\u0000*\u0000stitle\";s:32:\"IEEE microw. wirel. compon. lett\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:2:\"24\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"132\";s:8:\"\u0000*\u0000epage\";s:3:\"134\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1531-1309\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"SANTARELLI\";s:10:\"\u0000*\u0000aufirst\";s:7:\"Alberto\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:15:\"CIGNANI, Rafael\";i:1;s:19:\"GIBIINO, Gian Piero\";i:2;s:15:\"NIESSEN, Daniel\";i:3;s:21:\"TRAVERSO, Pier Andrea\";i:4;s:16:\"FLORIAN, Corrado\";i:5;s:28:\"SCHREURS, Dominique M. M. -P\";i:6;s:15:\"FILICORI, Fabio\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:73:\"A Double-Pulse Technique for the Dynamic I\/V Characterization of GaN FETs\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"3\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1109\/LMWC.2013.2290216\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:73:\"A Double-Pulse Technique for the Dynamic I\/V Characterization of GaN FETs\";s:9:\"\u0000*\u0000jtitle\";s:46:\"IEEE microwave and wireless components letters\";s:9:\"\u0000*\u0000stitle\";s:32:\"IEEE microw. wirel. compon. lett\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:2:\"24\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"132\";s:8:\"\u0000*\u0000epage\";s:3:\"134\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1531-1309\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"SANTARELLI\";s:10:\"\u0000*\u0000aufirst\";s:7:\"Alberto\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:15:\"CIGNANI, Rafael\";i:1;s:19:\"GIBIINO, Gian Piero\";i:2;s:15:\"NIESSEN, Daniel\";i:3;s:21:\"TRAVERSO, Pier Andrea\";i:4;s:16:\"FLORIAN, Corrado\";i:5;s:28:\"SCHREURS, Dominique M. M. -P\";i:6;s:15:\"FILICORI, Fabio\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:73:\"A Double-Pulse Technique for the Dynamic I\/V Characterization of GaN FETs\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"3\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1109\/LMWC.2013.2290216\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:73:\"A Double-Pulse Technique for the Dynamic I\/V Characterization of GaN FETs\";s:9:\"\u0000*\u0000jtitle\";s:46:\"IEEE microwave and wireless components letters\";s:9:\"\u0000*\u0000stitle\";s:32:\"IEEE microw. wirel. compon. lett\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:2:\"24\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"132\";s:8:\"\u0000*\u0000epage\";s:3:\"134\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1531-1309\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"SANTARELLI\";s:10:\"\u0000*\u0000aufirst\";s:7:\"Alberto\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:15:\"CIGNANI, Rafael\";i:1;s:19:\"GIBIINO, Gian Piero\";i:2;s:15:\"NIESSEN, Daniel\";i:3;s:21:\"TRAVERSO, Pier Andrea\";i:4;s:16:\"FLORIAN, Corrado\";i:5;s:28:\"SCHREURS, Dominique M. M. -P\";i:6;s:15:\"FILICORI, Fabio\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:73:\"A Double-Pulse Technique for the Dynamic I\/V Characterization of GaN FETs\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"3\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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