Molecular beam epitaxial growth of high electron mobility InAs/AlGaAsSb deep quantum well structures
- Author
- KUZE, N1 ; GOTO, H1 ; MATSUI, M1 ; SHIBASAKI, I1 ; SAKAKI, H2
[1] Central Laboratory, Asahi Chemical Industry Co., Ltd., 2-1 Samejima, Fuji, Shizuoka 416, Japan
[2] RCAST, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153, Japan - Conference title
- Molecular Beam Epitaxy
- Conference name
- MBE-IX: International Conference on Molecular Beam Epitaxy (9 ; Malibu, California 1996-08-05)
- Author (monograph)
- KAO, Yung-Chung (Editor)1
[1] Texas Instruments, United States - Source
Journal of crystal growth. 1997, Vol 175-76, pp 868-872 ; 2 ; ref : 9 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium antimoniure Aluminium arséniure Composé binaire Composé quaternaire Croissance cristalline en phase vapeur Epitaxie jet moléculaire Etude expérimentale Gallium antimoniure Gallium arséniure Indium arséniure Mobilité porteur charge Mode opératoire Photoluminescence Puits quantique Rapport mélange Semiconducteur III-V Al As Ga Sb AlGaAsSb As In InAs Composé minéral
- Keyword (en)
- Aluminium antimonides Aluminium arsenides Binary compounds Quaternary compounds Crystal growth from vapors Molecular beam epitaxy Experimental study Gallium antimonides Gallium arsenides Indium arsenides Carrier mobility Operating mode Photoluminescence Quantum wells Mixing ratio III-V semiconductors Inorganic compounds
- Keyword (es)
- Método operatorio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70E Magnetic properties and materials / 001B70E30 Magnetically ordered materials: other intrinsic properties / 001B70E30G Magnetic anisotropy
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2827469
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(96)00975-X 
https://dx.doi.org/10.1016/S0022-0248(96)00975-X
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