Role of the Seeding Promoter in MoS2 Growth by Chemical Vapor Deposition
- Author
- XI LING1 ; LEE, Yi-Hsien2 ; YUXUAN LIN1 ; WENJING FANG1 ; LILI YU1 ; DRESSELHAUS, Mildred S1 3 ; JING KONG1
[1] Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
[2] Material Sciences and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan, Province of China
[3] Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States - Source
Nano letters (Print). 2014, Vol 14, Num 2, pp 464-472, 9 p ; ref : 45 ref
- Publisher
- American Chemical Society, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Couche monomoléculaire Cristal hexagonal Dépôt chimique phase vapeur Effet concentration Germe cristallin Graphène Molybdène Mécanisme croissance Nanoélectronique Nucléation Optoélectronique Semiconducteur 6460Q 8105T 8115G 8535 BN MoS2 Substrat or
- Keyword (en)
- Monolayers Hexagonal crystals CVD Quantity ratio Crystal seeds Graphene Molybdenum Growth mechanism Nanoelectronics Nucleation Optoelectronics Semiconductor materials
- Keyword (es)
- Cristal hexagonal Graphene Mecanismo crecimiento Optoelectrónica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60D Equations of state, phase equilibria, and phase transitions / 001B60D60 General studies of phase transitions / 001B60D60Q Nucleation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05T Fullerenes and related materials; diamonds, graphite
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28302921
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl4033704 
https://dx.doi.org/10.1021/nl4033704
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