Shear strain induced indirect to direct transition in band gap in AlN monolayer nanosheet
- Autor
- PENG LIU1 2 ; DE SARKAR, Abir1 3 ; AHUJA, Rajeev1 2
[1] Royal Institute of Technology (KTH), Applied Materials Physics, Department of Materials Science and Engineering, Brinellvägen 23, 100 44 Stockholm, Sweden
[2] Uppsala University, Department of Physics and Astronomy, Condensed Matter Theory Group, Box 516, 751 20 Uppsala, Sweden
[3] Central University of Rajasthan, Department of Physics, NH-8, Bandarsindri, Rajasthan 305801, India - Fuente
Computational materials science. 2014, Vol 86, pp 206-210, 5 p ; ref : 20 ref
- ISSN
- 0927-0256
- Campo Científico
- Condensed state physics
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- A. Aluminum nitride (AlN) B. Monolayer nanosheet C. Band gap D. Strain
- Palabra clave (fr)
- Bande interdite Confinement quantique Contrainte compression Contrainte traction Couche ultramince Dispersion phonon Déformation biaxiale Déformation cisaillement Déformation uniaxiale Effet contrainte Méthode fonctionnelle densité Nanoplaque Nitrure d'aluminium Structure bande AlN
- Palabra clave (in)
- Energy gap Quantum confinement Compressive stress Tensile stress Ultrathin films Phonon dispersion Biaxial strain Shear deformation Uniaxial strain Stress effects Density functional method Nanoplate Aluminium nitride Band structure
- Palabra clave (es)
- Confinamiento cuántico Tensión compresión Tensión traccíon Dispersión fonón Deformación biaxial Deformación uniaxial Nanoplaca Aluminio nitruro
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C22 Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 28322206
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.commatsci.2014.01.026 
https://dx.doi.org/10.1016/j.commatsci.2014.01.026
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