Molecular beam epitaxy of vertically compact AlxGa1-xAS/GaAs laser-HEMT structures for monolithic integration
- Author
- GAYMANN, A1 ; SCHAUB, J1 ; BRONNER, W1 ; GRÜN, N1 ; HORNUNG, J1 ; KÖHLER, K1
[1] Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg, Germany - Conference title
- Molecular Beam Epitaxy
- Conference name
- MBE-IX: International Conference on Molecular Beam Epitaxy (9 ; Malibu, California 1996-08-05)
- Author (monograph)
- KAO, Yung-Chung (Editor)1
[1] Texas Instruments, United States - Source
Journal of crystal growth. 1997, Vol 175-76, pp 898-902 ; 2 ; ref : 7 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium Arséniure Circuit intégré monolithique Composé III-V Composé binaire Composé ternaire Condensation faisceau moléculaire Etude expérimentale Gallium Arséniure Laser semiconducteur Optoélectronique intégrée Transistor mobilité électron élevée Al As Ga AlxGa1-xAs As Ga GaAs
- Keyword (en)
- Aluminium Arsenides Monolithic integrated circuit III-V compound Binary compound Ternary compound Molecular beam condensation Experimental study Gallium Arsenides Semiconductor laser Integrated optoelectronics High electron mobility transistor
- Keyword (es)
- Aluminio Arseniuro Circuito integrado monolítico Compuesto III-V Compuesto binario Compuesto ternario Condensación haz molecular Estudio experimental Galio Arseniuro Laser semiconductor Optoelectrónica integrada Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02C Optical and optoelectronic circuits / 001D03G02C2 Integrated optoelectronics. Optoelectronic circuits
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2832609
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(96)00877-9 
https://dx.doi.org/10.1016/S0022-0248(96)00877-9
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