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Molecular beam epitaxy of vertically compact AlxGa1-xAS/GaAs laser-HEMT structures for monolithic integration

Author
GAYMANN, A1 ; SCHAUB, J1 ; BRONNER, W1 ; GRÜN, N1 ; HORNUNG, J1 ; KÖHLER, K1
[1] Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg, Germany
Conference title
Molecular Beam Epitaxy
Conference name
MBE-IX: International Conference on Molecular Beam Epitaxy (9 ; Malibu, California 1996-08-05)
Author (monograph)
KAO, Yung-Chung (Editor)1
[1] Texas Instruments, United States
Source

Journal of crystal growth. 1997, Vol 175-76, pp 898-902 ; 2 ; ref : 7 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Aluminium Arséniure Circuit intégré monolithique Composé III-V Composé binaire Composé ternaire Condensation faisceau moléculaire Etude expérimentale Gallium Arséniure Laser semiconducteur Optoélectronique intégrée Transistor mobilité électron élevée Al As Ga AlxGa1-xAs As Ga GaAs
Keyword (en)
Aluminium Arsenides Monolithic integrated circuit III-V compound Binary compound Ternary compound Molecular beam condensation Experimental study Gallium Arsenides Semiconductor laser Integrated optoelectronics High electron mobility transistor
Keyword (es)
Aluminio Arseniuro Circuito integrado monolítico Compuesto III-V Compuesto binario Compuesto ternario Condensación haz molecular Estudio experimental Galio Arseniuro Laser semiconductor Optoelectrónica integrada Transistor movibilidad elevada electrones
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02C Optical and optoelectronic circuits / 001D03G02C2 Integrated optoelectronics. Optoelectronic circuits

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2832609

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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