Pascal and Francis Bibliographic Databases

Help

Permanent link : http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28409031

Export

Selection :

Switching phenomenon in TlGaSe2 layered semiconductor

Author
SEYIDOV, MirHasanYu1 2 ; SULEYMANOV, Rauf A1 2 ; BALABAN, Ertan3 ; SALE, Yasin1
[1] Department of Physics, Gebze Institute of Technology, 41400 Gebze, Kocaeli, Turkey
[2] Institute of Physics Azerbaijan National Academy of Sciences, AZ, 1143 Baku, Azerbaijan
[3] TUBITAK-BILGEM, Scientific and Technical Research Council of Turkey, Gebze, Kocaeli 41470, Turkey
Source

Solid-state electronics. 2014, Vol 94, pp 39-43, 5 p ; ref : 24 ref

ISSN
0038-1101
Scientific domain
Electronics
Publisher
Elsevier, Kidlington
Publication country
United Kingdom
Document type
Article
Language
English
Author keyword
Disordered semiconductors Ferroelectric-semiconductor Incommensurate phase Switching effect
Keyword (fr)
Caractéristique courant tension Chalcogénure Chute tension Commutation électrique Dispositif semiconducteur Effet non linéaire Ferroélectricité Modélisation Phase incommensurable Recuit Résistance négative Semiconducteur Système désordonné Traitement thermique
Keyword (en)
Voltage current curve Chalcogenides Voltage fall Electrical switching Semiconductor device Non linear effect Ferroelectricity Modeling Incommensurate phase Annealing Negative resistance Semiconductor materials Disordered system Heat treatment
Keyword (es)
Característica corriente tensión Calcogenuro Caída tensión Conmutación eléctrica Dispositivo semiconductor Efecto no lineal Ferroelectricidad Modelización Fase inconmensurable Recocido Resistencia negativa Semiconductor(material) Sistema desordenado Tratamiento térmico
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
28409031

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Access to the document

Searching the Web