Pascal and Francis Bibliographic Databases

Help

Export

Selection :

Permanent link
http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28423445

Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers

Author
BOGUMILOWICZ, Y1 ; HARTMANN, J. M1
[1] CEA, LETI, Minatec Campus, 17 rue des Martyrs, 38054 Grenoble, France
Conference title
The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
Conference name
ICSI-8 International Conference on Silicon Epitaxy and Heterostructures (8 ; Fukuoka 2013-06-02) = ISCSI-VI International Symposium on Control of Semiconductor Interfaces (6 ; Fukuoka 2013-06-02)
Author (monograph)
MIYAZAKI, Seiichi (Editor)1 ; CAYMAX, Matty R (Editor)2 ; TORIUMI, Akira (Editor)10 ; WASHIO, Katzuyoshi (Editor)5 ; XIE, Ya-Hong (Editor)11 ; ZAIMA, Shigeaki (Editor)1 ; MANTL, Siegfried (Editor)3 ; MIYAO, Masanobu (Editor)4 ; MUROTA, Junichi (Editor)5 ; OGINO, Toshio (Editor)6 ; OKUMURA, Tsugunori (Editor)7 ; SHIOJIMA, Kenji (Editor)8 ; STURM, James C (Editor)9 ; TAKAGI, Shinichi (Editor)10
Kyushu University, Graduate School and Faculty of Information Science and Electrical Engineering, Fukuoka, Japan (Organiser of meeting)
Tohoku University, Research Institute of Electrical Communication, Sendai, Miyagi, Japan (Organiser of meeting)
Nagoya University, Graduate School of Engineering, Nagoya, Japan (Organiser of meeting)
Japan Society for the Promotion of Science (JSPS), Tokyo, Japan (Organiser of meeting)
Japan Society for the Promotion of Science (JSPS), 131st Committee on Thin Films, Tokyo, Japan (Organiser of meeting)
Japan Society for the Promotion of Science (JSPS), 154th Committee on Semiconductors Interfaces and their Applications, Tokyo, Japan (Organiser of meeting)
Fonds Wetenschappelijk Onderzoek-Vlaanderen Research Foundation Flanders (FWO) under Japan - Kingdom of Belgium Research Cooperative Program, Belgium (Organiser of meeting)
[1] Nagoya Univ., Japan
[2] imec, Belgium
[3] Fz-Jülich, Germany
[4] Kyusyu Univ., Japan
[5] Tohoku Univ., Japan
[6] Yokohama National Univ., Japan
[7] Tokyo Metro Univ., Japan
[8] Univ. of Fukui, Japan
[9] Princeton Univ., United States
[10] The Univ. of Tokyo, Japan
[11] UCLA, United States
Source

Thin solid films. 2014, Vol 557, pp 4-9, 6 p ; ref : 12 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
Boron Diborane Dichlorosilane Doping Epitaxy Germane Germanium Silicon
Keyword (fr)
Addition bore Addition silicium Bore Conductivité électrique Couche épitaxique Diffraction RX Dopage Dépôt chimique phase vapeur Effet pression Epitaxie Germanium Microscopie force atomique Monocristal Mécanisme croissance Polycristal Rugosité Silicium 6855A 6855J 7361 8115G
Keyword (en)
Boron additions Silicon additions Boron Electrical conductivity Epitaxial layers XRD Doping CVD Pressure effects Epitaxy Germanium Atomic force microscopy Monocrystals Growth mechanism Polycrystals Roughness Silicon
Keyword (es)
Doping Mecanismo crecimiento
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
28423445

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Access to the document

Searching the Web