Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source
- Author
- LUONG, T. K. P1 ; GHRIB, A2 ; PETIT, M1 ; EL KURDI, M2 ; BOUCAUD, P2 ; RINNERT, H3 ; MUROTA, J5 ; DAU, M. T1 ; ZRIR, M. A1 ; STOFFEL, M3 ; LE THANH, V1 ; DAINECHE, R4 ; LE, T. G1 ; HERESANU, V1 ; ABBES, O1
[1] Aix-Marseille Université, CNRS CINaM-UMR 7325, 13288 Marseille, France
[2] Institut d'Electronique Fondamentale, CNRS UMR 8622, Université Paris-Sud, Bât 220, 91405 Orsay, France
[3] Université de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy-Université, BP 70239, 54506 Vandoeuvre-lès-Nancy, France
[4] Aix-Marseille Université, CNRS IM2NP-UMR 6242, 13397 Marseille, France
[5] Res. Inst. Elec. Comm., Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan - Conference title
- The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
- Conference name
- ICSI-8 International Conference on Silicon Epitaxy and Heterostructures (8 ; Fukuoka 2013-06-02) = ISCSI-VI International Symposium on Control of Semiconductor Interfaces (6 ; Fukuoka 2013-06-02)
- Author (monograph)
- MIYAZAKI, Seiichi (Editor)1 ; CAYMAX, Matty R (Editor)2 ; TORIUMI, Akira (Editor)10 ; WASHIO, Katzuyoshi (Editor)5 ; XIE, Ya-Hong (Editor)11 ; ZAIMA, Shigeaki (Editor)1 ; MANTL, Siegfried (Editor)3 ; MIYAO, Masanobu (Editor)4 ; MUROTA, Junichi (Editor)5 ; OGINO, Toshio (Editor)6 ; OKUMURA, Tsugunori (Editor)7 ; SHIOJIMA, Kenji (Editor)8 ; STURM, James C (Editor)9 ; TAKAGI, Shinichi (Editor)10
Kyushu University, Graduate School and Faculty of Information Science and Electrical Engineering, Fukuoka, Japan (Organiser of meeting)
Tohoku University, Research Institute of Electrical Communication, Sendai, Miyagi, Japan (Organiser of meeting)
Nagoya University, Graduate School of Engineering, Nagoya, Japan (Organiser of meeting)
Japan Society for the Promotion of Science (JSPS), Tokyo, Japan (Organiser of meeting)
Japan Society for the Promotion of Science (JSPS), 131st Committee on Thin Films, Tokyo, Japan (Organiser of meeting)
Japan Society for the Promotion of Science (JSPS), 154th Committee on Semiconductors Interfaces and their Applications, Tokyo, Japan (Organiser of meeting)
Fonds Wetenschappelijk Onderzoek-Vlaanderen Research Foundation Flanders (FWO) under Japan - Kingdom of Belgium Research Cooperative Program, Belgium (Organiser of meeting)
[1] Nagoya Univ., Japan
[2] imec, Belgium
[3] Fz-Jülich, Germany
[4] Kyusyu Univ., Japan
[5] Tohoku Univ., Japan
[6] Yokohama National Univ., Japan
[7] Tokyo Metro Univ., Japan
[8] Univ. of Fukui, Japan
[9] Princeton Univ., United States
[10] The Univ. of Tokyo, Japan
[11] UCLA, United States - Source
Thin solid films. 2014, Vol 557, pp 70-75, 6 p ; ref : 27 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- MBE growth Optoelectronics Tensile strain Ge n-Doping
- Keyword (fr)
- Addition azote Addition germanium Addition silicium Bande interdite Contrainte traction Couche mince Couche tampon Diffraction RX Dopage Déplacement raie Déplacement vers le rouge Epitaxie jet moléculaire Mécanisme croissance Méthode SSMBE Méthode croissance Stranski-Krastanov Nanoélectronique Optoélectronique Phosphore Photoluminescence Propriété électronique Recuit Relaxation contrainte 6855A 7320 7855 8115H Substrat silicium
- Keyword (en)
- Nitrogen additions Germanium additions Silicon additions Energy gap Tensile stress Thin films Buffer layer XRD Doping Spectral line shift Red shift Molecular beam epitaxy Growth mechanism Solid source molecular beam epitaxy Stranski-Krastanov growth method Nanoelectronics Optoelectronics Phosphorus Photoluminescence Electronic properties Annealing Stress relaxation
- Keyword (es)
- Tensión traccíon Capa tampón Doping Mecanismo crecimiento Método SSMBE Método crecimiento Stranski-Krastanov Optoelectrónica Propiedad electrónica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28423457
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2013.11.027 
https://dx.doi.org/10.1016/j.tsf.2013.11.027
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