Analysis of the VIS―NIR spectral reflectance of Bi/GaAs structures grown by MOVPE and UHVE
- Autor
- HABCHI, M. M1 ; MASSOUDI, I1 ; REBEY, A1 ; BEN CHAABANE, R2 ; EL JANI, B1
[1] Unité de Recherche sur les Hétéro-Epitaxies et Applications (URHEA), Faculty of Sciences, University of Monastir, Monastir, Tunisia
[2] Laboratoire de Physique et Chimie des Interfaces (LPCI), Faculty of Sciences, University of Monastir, Monastir, Tunisia - Fuente
Journal of crystal growth. 2014, Vol 395, pp 26-30, 5 p ; ref : 52 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Campo Científico
- Crystallography; Geology; Metallurgy, welding
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- A1. Bismuth compounds A1. Crystal morphology A1. Refractive index A3. Metal organic vapor phase epitaxy B2. Semiconducting gallium arsenide
- Palabra clave (fr)
- Arséniure de gallium Bismuth Composé III-V Composé du bismuth Couche mince Epaisseur couche Epitaxie phase vapeur Evaporation sous vide Facteur réflexion Indice réfraction Microscopie force atomique Morphologie cristalline Méthode MOVPE Nanomatériau Propriété optique Rayonnement IR proche Rugosité Semiconducteur III-V Simulation numérique Spectre IR proche Spectre IR Spectre réflexion Vide poussé 6855J 7820 8107 8115K GaAs Substrat GaAs
- Palabra clave (in)
- Gallium arsenides Bismuth III-V compound Bismuth compounds Thin films Layer thickness VPE Vacuum evaporation Reflectivity Refractive index Atomic force microscopy Crystal morphology MOVPE method Nanostructured materials Optical properties Near infrared radiation Roughness III-V semiconductors Digital simulation Near infrared spectrum Infrared spectra Reflection spectrum High vacuum
- Palabra clave (es)
- Compuesto III-V Espesor capa Método MOVPE Espectro IR próximo Espectro reflexión
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H20 Optical properties of bulk materials and thin films
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Disciplina
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 28472332
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2014.03.001 
https://dx.doi.org/10.1016/j.jcrysgro.2014.03.001
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Acceso mediante arXiv
