Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1―yBiy
- Autor
- FORGHANI, Kamran1 2 ; YINGXIN GUAN3 ; WOOD, Adam W3 ; ANAND, Amita4 ; BABCOCK, Susan E3 ; MAWST, Luke J4 ; KUECH, Thomas F2
[1] Materials Research Science and Engineering Center on Nanostructured Interfaces (MRSEC), University of Wisconsin, 1415 Engineering Drive, Madison, WI 53706-1691, United States
[2] Department of Chemical and Biological Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, WI 53706-1691, United States
[3] Deprtment of Materials Science and Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, WI 53706-1691, United States
[4] Department of Electrical and Computer Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, WI 53706-1691, United States - Fuente
Journal of crystal growth. 2014, Vol 395, pp 38-45, 8 p ; ref : 49 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Campo Científico
- Crystallography; Geology; Metallurgy, welding
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- A1. High resolution x~ray diffraction A3. Metalorganic vapor phase epitaxy B1. Bismuth compounds B2. Semiconducting III―V materials B2. Semiconducting gallium arsenide B2. Semiconducting ternary compounds
- Palabra clave (fr)
- Alliage semiconducteur Analyse diffraction RX Arséniure de gallium Bicouche Bismuth Composé III-V Composé du bismuth Composé ternaire Diffraction RX Electronégativité Epaisseur couche Epitaxie phase vapeur Etude expérimentale Etude théorique Hétérostructure Microscopie électronique transmission Modèle phénoménologique Mécanisme croissance Méthode MOVPE Méthode fondant Nanomatériau Plan expérience Précurseur Puits quantique Semiconducteur III-V Ségrégation surface Taux croissance Très basse température 8107 8110A 8110F 8115K GaAs
- Palabra clave (in)
- Semiconductor alloys X-ray diffraction analysis Gallium arsenides Bilayers Bismuth III-V compound Bismuth compounds Ternary compounds XRD Electronegativity Layer thickness VPE Experimental study Theoretical study Heterostructures Transmission electron microscopy Phenomenological model Growth mechanism MOVPE method Flux growth Nanostructured materials Experimental design Precursor Quantum wells III-V semiconductors Surface segregation Growth rate Very low temperature
- Palabra clave (es)
- Compuesto III-V Espesor capa Modelo fenomenológico Mecanismo crecimiento Método MOVPE Método fundente Temperatura muy baja
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10F Growth from melts; zone melting and refining
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Disciplina
- Physics and materials science
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 28472334
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2014.03.014 
https://dx.doi.org/10.1016/j.jcrysgro.2014.03.014
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