Growth and characterisation of Ga(NAsBi) alloy by metal-organic vapour phase epitaxy
- Autor
- BUSHELL, Z. L1 2 ; LUDEWIG, P1 ; KNAUB, N1 ; BATOOL, Z2 ; HILD, K2 ; STOLZ, W1 ; SWEENEY, S. J2 ; VOLZ, K1
[1] Material Science Center and Faculty of Physics, Philipps-Universität Marburg, 35032 Marburg, Germany
[2] Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom - Fuente
Journal of crystal growth. 2014, Vol 396, pp 79-84, 6 p ; ref : 26 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Campo Científico
- Crystallography; Geology; Metallurgy, welding
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- A3. Metal-organic vapour phase epitaxy B1. Bismuth compounds B1. GaNAsBi B1. Nitrides B2. Semiconducting III-V materials B2. Semiconducting quaternary alloys
- Palabra clave (fr)
- Alliage quaternaire Arséniure de gallium Bande interdite Composé III-V Composé du bismuth Couche épitaxique Diffraction RX Epitaxie phase vapeur Hydrazine organique Hydrazine(1,2-diméthyl) Microscopie force atomique Microscopie électronique balayage transmission Mécanisme croissance Méthode MOVPE Nitrure Photoréflectance Propriété optique Propriété électronique Précurseur Puits quantique multiple Semiconducteur III-V Spectrométrie SIMS 7820 8110A 8115K GaNAsBi Substrat GaAs
- Palabra clave (in)
- Quaternary alloys Gallium arsenides Energy gap III-V compound Bismuth compounds Epitaxial layers XRD VPE Organic hydrazine Atomic force microscopy Scanning transmission electron microscopy Growth mechanism MOVPE method Nitrides Photoreflectance Optical properties Electronic properties Precursor Multiple quantum well III-V semiconductors Secondary ion mass spectrometry
- Palabra clave (es)
- Compuesto III-V Hidracina orgánica Mecanismo crecimiento Método MOVPE Propiedad electrónica Pozo cuántico múltiple Espectrometría SIMS
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H20 Optical properties of bulk materials and thin films
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Disciplina
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 28475077
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2014.03.038 
https://dx.doi.org/10.1016/j.jcrysgro.2014.03.038
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