MoS2 Field-Effect Transistors With Graphene/Metal Heterocontacts
- Author
- YUCHEN DU1 ; LINGMING YANG1 ; JINGYUN ZHANG1 ; HAN LIU1 ; MAJUMDAR, Kausik2 ; KIRSCH, Paul D2 ; YE, Peide D1
[1] Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, United States
[2] SEMATECH, Albany, NY 12203, United States - Source
IEEE electron device letters. 2014, Vol 35, Num 5, pp 599-601, 3 p ; ref : 26 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- MOSFET MoS2 Schottky barrier height graphene heterocontacts
- Keyword (fr)
- Barrière Schottky Caractéristique électrique Contact électrique Courant drain Dépendance température Effet on off Effet température Graphène Hauteur barrière Résistance contact Semiconducteur type n Technologie MOS Transistor MOSFET Transistor effet champ Semiconducteur bande interdite nulle
- Keyword (en)
- Schottky barrier Electrical characteristic Electric contact Drain current Temperature dependence On off effect Temperature effect Graphene Barrier height Contact resistance n type semiconductor MOS technology MOSFET Field effect transistor Zero band gap semiconductors
- Keyword (es)
- Barrera Schottky Característica eléctrica Contacto eléctrico Corriente dren Efecto on off Efecto temperatura Graphene Altura barrera Resistencia contacto Semiconductor tipo n Tecnología MOS Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28496444
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2014.2313340 
https://dx.doi.org/10.1109/LED.2014.2313340
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