Influences of in situ annealing on microstructure, residual stress and electrical resistivity for sputter-deposited Be coating
- Autor
- LUO, B. C1 2 ; LI, K1 ; TAN, X. L1 2 ; ZHANG, J. Q1 ; LUO, J. S1 ; JIANG, X. D1 ; WU, W. D1 ; TANG, Y. J1
[1] Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
[2] Science and Technology on Plasma Physics Laboratory, Mianyang 621900, China - Fuente
Journal of alloys and compounds. 2014, Vol 607, pp 150-156, 7 p ; ref : 33 ref
- ISSN
- 0925-8388
- Campo Científico
- Inorganic chemistry; Crystallography; Metallurgy, welding; Condensed state physics
- Editor
- Elsevier, Kidlington
- País de la publicación
- United Kingdom
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- Beryllium coating Electrical resistivity Grain boundary Residual stress Surface roughness
- Palabra clave (fr)
- Béryllium Conductivité électrique Contrainte résiduelle Diffraction RX Diffusion superficielle Grosseur grain Microstructure Pulvérisation cathodique Recristallisation Recuit Revêtement surface Réseau hexagonal compact
- Palabra clave (in)
- Beryllium Electrical conductivity Residual stresses XRD Surface diffusion Grain size Microstructure Cathode sputtering Recrystallization Annealing Surface coating HCP lattices
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 28513277
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jallcom.2014.03.128 
https://dx.doi.org/10.1016/j.jallcom.2014.03.128
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