Modelling point defects diffusion and interaction in silicon : The tight-binding molecular dynamics approach
- Author
- COLOMBO, L1 ; BONGIORNO, A1
[1] Istituto Nazionale per la Fisica della Materia (INFM) and Dipartimento di Scienza dei Materiali, Università degli Studi di Milano via Emanueli 15, 20126 Milano, Italy - Conference title
- Solute point defect interactions in crystals
- Conference name
- Spring Discussion Meeting of the Deutsche Bunsen- Gesellschaft für Physikalische Chemie (1997-04-07)
- Author (monograph)
- SCHMALZEIED, H (Editor); LIDIARD, A. B (Editor)1 2
Deutsche Bunsen- Gesellschaft für Physikalische Chemie, Germany (Funder/Sponsor)
Royal Society of Chemistry ; Polar Solids Discussion Group, London, United Kingdom (Funder/Sponsor)
[1] Physical and Theoretical Chemistry Laboratory, University of Oxford, South Parks Road, Oxford, OX1 3QZ, United Kingdom
[2] J.J. Thompson Physical Laboratory, University of Reading, Whitenights, Reading, RG6 6AF, United Kingdom - Source
Berichte der Bunsen-Gesellschaft. = Physical chemistry, chemical physics. 1997, Vol 101, Num 9, pp 1211-1214 ; ref : 7 ref
- ISSN
- 0940-483X
- Scientific domain
- General chemistry, physical chemistry; Atomic molecular physics
- Publisher
- Wiley, Weinheim
- Publication country
- Germany
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Approximation liaison forte Calcul dynamique moléculaire Diffusion(transport) Défaut ponctuel Etude théorique Silicium Si
- Keyword (en)
- Tight binding approximation Molecular dynamics calculations Diffusion Point defects Theoretical study Silicon
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F30 Diffusion in solids / 001B60F30L Diffusion of other defects
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2852272
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/bbpc.199700027 
https://dx.doi.org/10.1002/bbpc.199700027
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