A brief review of atomic layer deposition: from fundamentals to applications
- Author
- JOHNSON, Richard W1 ; HULTQVIST, Adam2 ; BENT, Stacey F1 2
[1] Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, United States
[2] Department of Chemical Engineering, Stanford University, Stanford, CA 94305, United States - Source
Materials today (Kidlington). 2014, Vol 17, Num 5, pp 236-246, 11 p ; ref : 101 ref
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Application Cellule solaire Couche mince Dépôt phase vapeur Epaisseur Microstructure Métal Oxyde Méthode ALE Pile combustible oxyde solide Rapport aspect Transistor
- Keyword (en)
- Application Solar cell Thin film Vapor deposition Thickness Microstructure Metal Oxides Atomic layer epitaxial growth Solid oxide fuel cell Aspect ratio Transistor
- Keyword (es)
- Aplicación Célula solar Capa fina Depósito fase vapor Espesor Microestructura Metal Óxido Pila combustible oxido sólido Relación dimensional Transistor
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells
- Discipline
- Electronics Energy Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28525993
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mattod.2014.04.026 
https://dx.doi.org/10.1016/j.mattod.2014.04.026
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