A promising sputtering for in situ fabrication of CIGS thin films without post-selenization
- Author
- LIANG, Guang-Xing1 2 ; PING FAN1 2 ; CHEN, Chao-Ming1 ; ZHENG, Zhuang-Hao1 ; ZHANG, Dong-Ping1 2
[1] Institute of Thin Film Physics and Applications, College of Physics Science and Technology, Shenzhen University., Shenzhen, China
[2] Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060, China - Source
Journal of alloys and compounds. 2014, Vol 610, pp 337-340, 4 p ; ref : 12 ref
- ISSN
- 0925-8388
- Scientific domain
- Inorganic chemistry; Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- CuInGaSe2 film Photovoltaics Solar cells Sputtering
- Keyword (fr)
- Cellule solaire Couche mince Effet photovoltaïque Microstructure Polycristal Pulvérisation haute fréquence Rendement Structure chalcopyrite Séléniure d'indium Séléniure de cuivre Séléniure de gallium CuInGaSe2
- Keyword (en)
- Solar cells Thin films Photovoltaic effects Microstructure Polycrystals Radiofrequency sputtering Yields Chalcopyrite structure Indium selenides Copper selenides Gallium selenides
- Keyword (es)
- Pulverización alta frecuencia Estructura calcopirita
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells
- Discipline
- Energy Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28565564
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jallcom.2014.05.002 
https://dx.doi.org/10.1016/j.jallcom.2014.05.002
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