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Molecular beam epitaxy of SrTiO3 on GaAs(001): GaAs surface treatment and structural characterization of the oxide layer

Author
LOUAHADJ, L1 ; BACHELET, R2 ; REGRENY, P2 ; LARGEAU, L3 ; DUBOURDIEU, C2 ; SAINT-GIRONS, G2
[1] RIBER SA, 31 rue Casimir Périer, 95870 Bezons, France
[2] Université de Lyon, Ecole Centrale de Lyon, INL-UMR5270-CNRS, 36 Av. Guy de Collongue, 69134 Ecully, France
[3] LPN-UPR20-CNRS, Route de Nozay, 91460 Marcoussis, France
Conference title
European Materials Research Society (E-MRS) Spring Meeting 2013 Symposium H: Multifunctional Binary and Complex Oxide Films and Nanostructures for Microelectronic Applications
Conference name
European Materials Research Society (E-MRS) Spring Meeting 2013. Symposium H: Multifunctional Binary and Complex Oxide Films and Nanostructures for Microelectronic Applications (E-MRS) Spring Meeting 2013. Symposium H: Multifunctional Binary and Complex Oxide Films and Nanostructures for Microelectronic Applications (Strasbourg 2013-05-27)
Author (monograph)
WALCZYK, Christian (Editor)1 ; DUBOURDIEU, Catherine (Editor)2 ; FIEBIG, Manfred (Editor)3 ; PRELLIER, Wilfrid (Editor)4 ; IONESCU, Mihai Adrian (Editor)5
European Materials Research Society (E-MRS), Strasbourg, France (Organiser of meeting)
[1] IHP, Frankfurt (Oder), Germany
[2] CNRS, Institut des Nanotechnologies de Lyon, Lyon, Ecully, France
[3] Materials Department, ETH Eurich, Zurich, Switzerland
[4] Laboratoire CRISMAT, CNRS UMR 6508, ENSICAEN, Caen, France
[5] EPFL Lausanne, Lausanne, Switzerland
Source

Thin solid films. 2014, Vol 563, pp 2-5, 4 p ; ref : 16 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
Heteroepitaxy MBE Monolithic integration Oxides on semiconductor Perovskite
Keyword (fr)
Arséniure de gallium Composé III-V Couche oxyde Couche épitaxique Cristallinité Epitaxie jet moléculaire Hétéroépitaxie Interface Mécanisme croissance RHEED Réaction dirigée Semiconducteur III-V Substrat semiconducteur Traitement surface 6855A 6855J 8105E 8115H SrTiO3 Substrat GaAs
Keyword (en)
Gallium arsenides III-V compound Oxide layer Epitaxial layers Crystallinity Molecular beam epitaxy Heteroepitaxy Interfaces Growth mechanism RHEED Template reaction III-V semiconductors Semiconductor substrate Surface treatments
Keyword (es)
Compuesto III-V Capa óxido Cristalinidad Heteroepitaxia Mecanismo crecimiento Reacción dirigida Substrato semiconductor
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy

Discipline
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
28575052

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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