Molecular beam epitaxy of SrTiO3 on GaAs(001): GaAs surface treatment and structural characterization of the oxide layer
- Author
- LOUAHADJ, L1 ; BACHELET, R2 ; REGRENY, P2 ; LARGEAU, L3 ; DUBOURDIEU, C2 ; SAINT-GIRONS, G2
[1] RIBER SA, 31 rue Casimir Périer, 95870 Bezons, France
[2] Université de Lyon, Ecole Centrale de Lyon, INL-UMR5270-CNRS, 36 Av. Guy de Collongue, 69134 Ecully, France
[3] LPN-UPR20-CNRS, Route de Nozay, 91460 Marcoussis, France - Conference title
- European Materials Research Society (E-MRS) Spring Meeting 2013 Symposium H: Multifunctional Binary and Complex Oxide Films and Nanostructures for Microelectronic Applications
- Conference name
- European Materials Research Society (E-MRS) Spring Meeting 2013. Symposium H: Multifunctional Binary and Complex Oxide Films and Nanostructures for Microelectronic Applications (E-MRS) Spring Meeting 2013. Symposium H: Multifunctional Binary and Complex Oxide Films and Nanostructures for Microelectronic Applications (Strasbourg 2013-05-27)
- Author (monograph)
- WALCZYK, Christian (Editor)1 ; DUBOURDIEU, Catherine (Editor)2 ; FIEBIG, Manfred (Editor)3 ; PRELLIER, Wilfrid (Editor)4 ; IONESCU, Mihai Adrian (Editor)5
European Materials Research Society (E-MRS), Strasbourg, France (Organiser of meeting)
[1] IHP, Frankfurt (Oder), Germany
[2] CNRS, Institut des Nanotechnologies de Lyon, Lyon, Ecully, France
[3] Materials Department, ETH Eurich, Zurich, Switzerland
[4] Laboratoire CRISMAT, CNRS UMR 6508, ENSICAEN, Caen, France
[5] EPFL Lausanne, Lausanne, Switzerland - Source
Thin solid films. 2014, Vol 563, pp 2-5, 4 p ; ref : 16 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Heteroepitaxy MBE Monolithic integration Oxides on semiconductor Perovskite
- Keyword (fr)
- Arséniure de gallium Composé III-V Couche oxyde Couche épitaxique Cristallinité Epitaxie jet moléculaire Hétéroépitaxie Interface Mécanisme croissance RHEED Réaction dirigée Semiconducteur III-V Substrat semiconducteur Traitement surface 6855A 6855J 8105E 8115H SrTiO3 Substrat GaAs
- Keyword (en)
- Gallium arsenides III-V compound Oxide layer Epitaxial layers Crystallinity Molecular beam epitaxy Heteroepitaxy Interfaces Growth mechanism RHEED Template reaction III-V semiconductors Semiconductor substrate Surface treatments
- Keyword (es)
- Compuesto III-V Capa óxido Cristalinidad Heteroepitaxia Mecanismo crecimiento Reacción dirigida Substrato semiconductor
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28575052
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2014.02.062 
https://dx.doi.org/10.1016/j.tsf.2014.02.062
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