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Electrical and photovoltaic properties of ZnO/Si heterostructures with ZnO films grown by atomic layer deposition

Autor
PIETRUSZKA, R1 ; LUKA, G1 ; WITKOWSKI, B. S1 ; KOPALKO, K1 ; ZIELONY, E2 ; BIEGANSKI, P2 ; PLACZEK-POPKO, E2 ; GODLEWSKI, M1 3
[1] Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
[2] Institute of Physics, Wroclaw University of Technology, Wroclaw, Poland
[3] Department of Mathematics and Natural Sciences College of Science, Cardinal Stefan Wyszynski University, Warsaw, Poland
Titulo de la conferencia
European Materials Research Society (E-MRS) Spring Meeting 2013 Symposium H: Multifunctional Binary and Complex Oxide Films and Nanostructures for Microelectronic Applications
Nombre de la conferencia
European Materials Research Society (E-MRS) Spring Meeting 2013. Symposium H: Multifunctional Binary and Complex Oxide Films and Nanostructures for Microelectronic Applications (E-MRS) Spring Meeting 2013. Symposium H: Multifunctional Binary and Complex Oxide Films and Nanostructures for Microelectronic Applications (Strasbourg 2013-05-27)
Autor ( monografía)
WALCZYK, Christian (Editor)1 ; DUBOURDIEU, Catherine (Editor)2 ; FIEBIG, Manfred (Editor)3 ; PRELLIER, Wilfrid (Editor)4 ; IONESCU, Mihai Adrian (Editor)5
European Materials Research Society (E-MRS), Strasbourg, France (Organiser of meeting)
[1] IHP, Frankfurt (Oder), Germany
[2] CNRS, Institut des Nanotechnologies de Lyon, Lyon, Ecully, France
[3] Materials Department, ETH Eurich, Zurich, Switzerland
[4] Laboratoire CRISMAT, CNRS UMR 6508, ENSICAEN, Caen, France
[5] EPFL Lausanne, Lausanne, Switzerland
Fuente

Thin solid films. 2014, Vol 563, pp 28-31, 4 p ; ref : 23 ref

CODEN
THSFAP
ISSN
0040-6090
Campo Científico
Crystallography; Metallurgy, welding; Condensed state physics
Editor
Elsevier, Amsterdam
País de la publicación
Netherlands
Tipo de documento
Conference Paper
Idioma
English
Palabra clave de autor
Atomic layer deposition Heterojunction Silicon Solar cells Zinc oxide
Palabra clave (fr)
Addition aluminium Cellule solaire Couche mince Croissance cristalline en phase vapeur Dispositif photovoltaïque Effet dimensionnel Epaisseur couche Hétérojonction Hétérostructure Méthode couche atomique Oxyde de zinc Propriété électrique Silicium 6855J 7350 8115K 8460J Substrat silicium ZnO
Palabra clave (in)
Aluminium additions Solar cells Thin films Crystal growth from vapors Photovoltaic cell Size effect Layer thickness Heterojunctions Heterostructures Atomic layer method Zinc oxide Electrical properties Silicon
Palabra clave (es)
Dispositivo fotovoltaico Espesor capa Método capa atómica Zinc óxido
Clasificación
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C50 Electronic transport phenomena in thin films and low-dimensional structures

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells

Disciplina
Energy Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Procedencia
Inist-CNRS
Base de datos
PASCAL
Identificador INIST
28575058

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