Molecular Beam Epitaxial Growth and Properties of Bi2Se3 Topological Insulator Layers on Different Substrate Surfaces
- Author
- ZHIYI CHEN1 ; GARCIA, Thor Axtmann1 ; DE JESUS, Joel1 ; ZHAO, Lukas1 ; HAIMING DENG1 ; SECOR, Jeff1 ; BEGLIARBEKOV, Milan1 ; KRUSIN-ELBAUM, Lia1 ; TAMARGO, Maria C1
[1] The City College of New York, New York, NY, United States - Conference name
- 2013 ELECTRONIC MATERIALS CONFERENCE (South Bend, Indiana 2013-06-26)
- Source
Journal of electronic materials. 2014, Vol 43, Num 4, pp 909-913, 5 p ; ref : 32 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Springer, Heidelberg
- Publication country
- Germany
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Bi2Se3 MBE TI
- Keyword (fr)
- Couche mince Couche épitaxique Epitaxie jet moléculaire Face cristalline Hétéroépitaxie Interface Monocristal Mécanisme croissance Phénomène transport Propriété transport Propriété électrique Structure cristalline Structure surface Topographie surface 6166 8110A 8115H Bi2Se3 Isolant topologique Substrat GaAs Substrat InP Substrat indium phosphure
- Keyword (en)
- Thin films Epitaxial layers Molecular beam epitaxy Crystal faces Heteroepitaxy Interfaces Monocrystals Growth mechanism Transport processes Transport properties Electrical properties Crystal structure Surface structure Surface topography Topological insulator
- Keyword (es)
- Heteroepitaxia Mecanismo crecimiento Propiedad transporte
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A66 Structure of specific crystalline solids
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28580206
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s11664-013-2890-7 
https://dx.doi.org/10.1007/s11664-013-2890-7
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