Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates
- Autor
- ZHAO, Z. D1 ; WANG, B1 ; SUI, Y. P1 ; XU, W1 ; LI, X. L1 ; YU, G. H1
[1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China - Fuente
Journal of electronic materials. 2014, Vol 43, Num 3, pp 786-790, 5 p ; ref : 14 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Campo Científico
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Editor
- Springer, Heidelberg
- País de la publicación
- Germany
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- GaN HVPE hydrogen etching porous template
- Palabra clave (fr)
- Composé III-V Couche mince Couche tampon Couche épitaxique Densité dislocation Dislocation Epitaxie phase vapeur Gravure Haute température Hydrure Matériau poreux Mécanisme croissance Méthode MOCVD Optimisation Perfection cristalline Réaction dirigée Semiconducteur III-V 6172L 8105R 8115G 8115K GaN Méthode template Substrat GaN Substrat saphir
- Palabra clave (in)
- III-V compound Thin films Buffer layer Epitaxial layers Dislocation density Dislocations VPE Etching High temperature Hydrides Porous materials Growth mechanism MOCVD Optimization Crystal perfection Template reaction III-V semiconductors Template method
- Palabra clave (es)
- Compuesto III-V Capa tampón Alta temperatura Mecanismo crecimiento Perfección cristalina Reacción dirigida
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72L Linear defects: dislocations, disclinations
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05R Porous materials; granular materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Disciplina
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 28583147
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s11664-013-2920-5 
https://dx.doi.org/10.1007/s11664-013-2920-5
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