Anisotropic wetting properties on a precision-ground micro-V-grooved Si surface related to their micro-characterized variables
- Author
- LI, P1 ; XIE, J1 ; CHENG, J1 ; WU, K. K1
[1] School of Mechanical and Automotive Engineering, South China University of Technology, Guangzhou 510640, China - Source
Journal of micromechanics and microengineering (Print). 2014, Vol 24, Num 7 ; 075004.1-075004.14 ; ref : 28 ref
- ISSN
- 0960-1317
- Scientific domain
- Electronics; Mechanical engineering
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Ancrage Anisotropie Formation motif Forme en V Glissement Matériau composite Microusinage Morphologie surface Mouillage Rainure Rectification surface Robustesse Silicium Si
- Keyword (en)
- Pinning Anisotropy Patterning V shape Slip Composite materials Micromachining Surface morphology Wetting Groove Grinding Robustness Silicon
- Keyword (es)
- Forma de una V Ranura Robustez
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H45 Solid-fluid interfaces / 001B60H45G Wetting
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A65 Surface treatments
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28583897
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0960-1317/24/7/075004 
https://dx.doi.org/10.1088/0960-1317/24/7/075004
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