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Effects of nitridation durations on the synthesis of wurtzite GaN thin films by spin coating method

Author
FONG, C. Y1 ; NG, S. S1 ; YAM, F. K1 ; ABU HASSAN, H1 ; HASSAN, Z1
[1] Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia
Source

Journal of sol-gel science and technology. 2014, Vol 71, Num 2, pp 329-332, 4 p ; ref : 10 ref

ISSN
0928-0707
Scientific domain
General chemistry, physical chemistry; Condensed state physics
Publisher
Springer, Heidelberg
Publication country
Germany
Document type
Article
Language
English
Author keyword
Nitride materials Sol-gel processes Thin films X-ray diffraction
Keyword (fr)
Couche mince Diffraction RX Dépôt centrifugation Nitrure de gallium Procédé sol gel Synthèse
Keyword (en)
Thin film X ray diffraction Spin-on coating Gallium nitride Sol gel process Synthesis
Keyword (es)
Capa fina Difracción RX Galio nitruro Procedimiento sol gel Síntesis
Classification
Pascal
001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01J Colloidal state and disperse state / 001C01J05 Colloidal gels. Colloidal sols

Discipline
General chemistry and physical chemistry
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
28610063

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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