A behavioral model for MCT surge current analysis in pulse discharge
- Author
- WANJUN CHEN1 3 ; RUIZE SUN1 ; KUN XIAO1 ; HONGZHI ZHU2 ; CHAOFEI PENG1 ; ZHAOYANG RUAN2 ; JIANXIN RUAN1 ; BO ZHANG1 ; ZHAOJI LI1
[1] The State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
[2] China Academy of Engineering Physics, Mianyang 621900, China
[3] Science and Technology on Reliability Physics and Application Technology of Electronic Component Lab, Guangzhou 510610, China - Source
Solid-state electronics. 2014, Vol 99, pp 31-37, 7 p ; ref : 21 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- Behavioral model High current rising rate High current MOS-Controlled Thyristor (MCT) Pulse discharge
- Keyword (fr)
- Critère conception Impulsion électrique Instabilité Modélisation Remontée pression Simulation ordinateur Thyristor
- Keyword (en)
- Design criterion Electric pulse Instability Modeling Pressure surge Computer simulation Thyristor
- Keyword (es)
- Criterio concepción Impulso eléctrico Inestabilidad Modelización Elevación presión Simulación computadora Tiristor
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D05 Electrical engineering. Electrical power engineering / 001D05H Power electronics, power supplies
- Discipline
- Electrical engineering. Electroenergetics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28611936
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.sse.2014.04.044 
https://dx.doi.org/10.1016/j.sse.2014.04.044
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