High-quality MOVPE butt-joint integration of InP/AlGaInAs/InGaAsP-based all-active optical components
- Autor
- KULKOVA, I. V1 ; KADKHODAZADEH, S2 ; KUZNETSOVA, N1 ; HUCK, A3 ; SEMENOVA, E. S1 ; YVIND, K1
[1] DTU Fotonik - Department of Photonics Engineering, Technical University of Denmark, 2800 Kongens Lyngby, Denmark
[2] DTU Cen - Center for Electron Nanoscopy, Technical University of Denmark, 2800 Kongens Lyngby, Denmark
[3] DTU Physics, Technical University of Denmark, 2800 Kongens Lyngby, Denmark - Fuente
Journal of crystal growth. 2014, Vol 402, pp 243-248, 6 p ; ref : 28 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Campo Científico
- Crystallography; Geology; Metallurgy, welding
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- A3. Butt-joint scheme A3. Metalorganic vapor phase epitaxy A3. Selective area growth B2. AlGaInAs/InP
- Palabra clave (fr)
- Aire sélective Aluminium Gallium Arséniure Mixte Bande interdite Boucle réaction Composé III-V Croissance sélective Déplacement raie Epitaxie phase vapeur Facteur réflexion Interface Mécanisme croissance Méthode MOVPE Puits quantique multiple Semiconducteur III-V Taux croissance Transmission lumière 8110A 8115K AlGaAs AlGaInAs Dispositif photonique InP
- Palabra clave (in)
- Selective area Aluminium Gallium Arsenides Mixed Energy gap Feedback III-V compound Selective growth Spectral line shift VPE Reflectivity Interfaces Growth mechanism MOVPE method Multiple quantum well III-V semiconductors Growth rate Light transmission Photonic device
- Palabra clave (es)
- Mixto Compuesto III-V Mecanismo crecimiento Método MOVPE Pozo cuántico múltiple Dispositivo fotónico
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Disciplina
- Physics and materials science
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 28664719
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2014.06.026 
https://dx.doi.org/10.1016/j.jcrysgro.2014.06.026
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Acceso mediante arXiv
