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Deflection of threading dislocations in patterned 4H-SiC epitaxial growth

Autor
TSUCHIDA, Hidekazu1 ; TAKANASHI, Ryosuke1 ; KAMATA, Isaho1 ; HOSHINO, Norihiro1 ; MAKINO, Emi2 ; KOJIMA, Jun2
[1] Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
[2] DENSO Corporation, 500-1 Minamiyama, Komenoki, Nisshin, Aichi, Japan
Fuente

Journal of crystal growth. 2014, Vol 402, pp 260-266, 7 p ; ref : 29 ref

CODEN
JCRGAE
ISSN
0022-0248
Campo Científico
Crystallography; Geology; Metallurgy, welding
Editor
Elsevier, Amsterdam
País de la publicación
Netherlands
Tipo de documento
Article
Idioma
English
Palabra clave de autor
A1. Characterization A1. Line defects A3. Vapor phase epitaxy B1. Silicon carbide B2. Semiconducting materials
Palabra clave (fr)
Carbure de silicium Couche épitaxique Dislocation filetée Epitaxie phase vapeur Gravure sèche Microscopie optique Morphologie Mécanisme croissance Rayonnement synchrotron Topographie RX 6172L 8110A 8115K
Palabra clave (in)
Silicon carbide Epitaxial layers Threading dislocation VPE Dry etching Optical microscopy Morphology Growth mechanism Synchrotron radiation X-ray topography
Palabra clave (es)
Silicio carburo Dislocación aterrajada Grabado seco Mecanismo crecimiento
Clasificación
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72L Linear defects: dislocations, disclinations

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase

Disciplina
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Procedencia
Inist-CNRS
Base de datos
PASCAL
Identificador INIST
28664721

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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