Holmium titanium oxide thin films grown by atomic layer deposition
- Autor
- KUKLI, Kaupo1 2 ; KEMELL, Marianna1 ; MUKESH CHANDRA DIMRI3 ; PUUKILAINEN, Esa1 ; TAMM, Aile2 ; STERN, Raivo3 ; RITALA, Mikko1 ; LESKELÄ, Markku1
[1] University of Helsinki, Department of Chemistry, University of Helsinki, P.O. Box 55, 00014 Helsinki, Finland
[2] University of Tarru, Institute of Physics, Department of Materials Science, Ravila 14c, 50411 Tartu, Estonia
[3] National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn, Estonia - Fuente
Thin solid films. 2014, Vol 565, pp 261-266, 6 p ; ref : 26 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Campo Científico
- Crystallography; Metallurgy, welding; Condensed state physics
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- Atomic layer deposition Crystal growth Magnetic materials
- Palabra clave (fr)
- Aimantation saturation Couche mince amorphe Couche mince Croissance cristalline en phase vapeur Croissance cristalline Magnétométrie Matériau magnétique Méthode couche atomique Oxyde de titane Précurseur Recuit Titane 8115K Substrat silicium
- Palabra clave (in)
- Saturation magnetization Amorphous thin film Thin films Crystal growth from vapors Crystal growth Magnetometry Magnetic materials Atomic layer method Titanium oxide Precursor Annealing Titanium
- Palabra clave (es)
- Imanación saturación Capa fina amorfa Magnetometría Método capa atómica Titanio óxido
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Disciplina
- Physics and materials science
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 28697430
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2014.06.028 
https://dx.doi.org/10.1016/j.tsf.2014.06.028
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