Incorporation and Activation of Arsenic Dopant in Single-Crystal CdTe Grown on Si by Molecular Beam Epitaxy
- Author
- PARK, J. H1 ; FARRELL, S2 ; KODAMA, R1 ; BLISSETT, C1 ; WANG, X1 ; COLEGROVE, E1 ; METZGER, W. K2 ; GESSERT, T. A2 ; SIVANANTHAN, S1
[1] EPIR Technologies Inc., Bolingbrook, IL 60440, United States
[2] National Renewable Energy Laboratory (NREL), Golden, CO 80401, United States - Conference title
- 2013 U.S. Workshop on the Physics and Chemistry of II-VI Materials
- Conference name
- 2013 U.S. Workshop on the Physics and Chemistry of II-VI Materials (Chicago, Illinois 2013-10-01)
- Author (monograph)
- SIVANANTHAN, S (Editor); DHAR, N. K (Editor)
- Source
Journal of electronic materials. 2014, Vol 43, Num 8, pp 2998-3003, 6 p ; ref : 13 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Springer, Heidelberg
- Publication country
- Germany
- Document type
- Conference Paper
- Language
- English
- Author keyword
- As-doping CdTe Hall measurement SIMS activation dislocations incorporation
- Keyword (fr)
- Addition arsenic Arsenic Cellule solaire Condition opératoire Densité trou Densité élevée Dislocation Dopage Défaut complexe Effet Hall Epitaxie jet moléculaire Monocristal Mécanisme croissance Optimisation Perfection cristalline Recuit Semiconducteur II-VI Semiconducteur type p Spectre SIMS Spectrométrie SIMS 6172L 8110A 8115H 8460J CdTe Substrat CdTe Substrat silicium
- Keyword (en)
- Arsenic addition Arsenic Solar cell Operating conditions Hole density High density Dislocation Doping Complex defect Hall effect Molecular beam epitaxy Single crystal Growth mechanism Optimization Crystal perfection Annealing II-VI semiconductors p type semiconductor Secondary ion mass spectra Secondary ion mass spectrometry
- Keyword (es)
- Adición arsénico Arsénico Célula solar Condición operatoria Densidad huecos Densidad elevada Dislocación Doping Defecto complejo Efecto Hall Monocristal Mecanismo crecimiento Optimización Perfección cristalina Recocido Semiconductor tipo p Espectrometría SIMS
- Keyword (de)
- Arsenzusatz Arsen Loecherdichte Versetzung Dopen Hall Effekt Einkristall Wachstumsmechanismus Optimierung Gluehen P Leiter Sekundaerionenmassenspektrometrie
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D11 Metals. Metallurgy / 001D11C Production techniques / 001D11C02 Heat treatment / 001D11C02A Annealing
- Discipline
- Energy Metals. Metallurgy Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28700694
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s11664-014-3173-7 
https://dx.doi.org/10.1007/s11664-014-3173-7
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