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Magneto-Optical Properties of Wurtzite-Phase InP Nanowires

Author
DE LUCA, M1 ; POLIMENI, A1 ; CAPIZZI, M1 ; FONSEKA, H. A2 ; MEANEY, A3 ; CHRISTIANEN, P. C. M3 ; MAAN, J. C3 ; PAIMAN, S2 ; TAN, H. H2 ; MURA, F4 ; JAGADISH, C2
[1] Dipartimento di Fisica and CNISM, Sapienza Università di Roma, Piazzale A. Moro 2, 00185 Roma, Italy
[2] Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia
[3] High Field Magnet Laboratory, Institute of Molecules and Materials, Radboud University Nijmegen, Toernooiveld 7, 6525 ED Nijmegen, Netherlands
[4] Dipartimento di Scienze di Base e Applicate per l'Ingegneria, Sapienza Università di Roma, Via Scarpa 16, 00185 Roma, Italy
Source

Nano letters (Print). 2014, Vol 14, Num 8, pp 4250-4256, 7 p ; ref : 46 ref

ISSN
1530-6984
Scientific domain
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
American Chemical Society, Washington, DC
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Anisotropie Arséniure d'indium Arséniure de gallium Bande interdite Composé III-V Dichroïsme circulaire Direction cristallographique Exciton Facteur g Masse effective Nanofil Nanomatériau Orientation cristalline Phosphure d'indium Photoluminescence Propriété optique Propriété électronique Semiconducteur III-V Structure bande Structure électronique 7322 7867 8107B 8107V InP
Keyword (en)
Anisotropy Indium arsenides Gallium arsenides Energy gap III-V compound Circular dichroism Crystallographic direction Excitons g-factor Effective mass Nanowires Nanostructured materials Crystal orientation Indium phosphide Photoluminescence Optical properties Electronic properties III-V semiconductors Band structure Electronic structure
Keyword (es)
Compuesto III-V Dirección cristalográfica Indio fosfuro Propiedad electrónica
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C22 Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H67 Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07B Nanocrystalline materials

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
28765367

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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