Low-frequency noise in diagnostics of power blue InGaN/GaN LEDs
- Autor
- CHERNYAKOV, A. E1 ; LEVINSHTEIN, M. E2 ; TALNISHNIKH, N. A2 ; SHABUNINA, E. I2 ; SHMIDT, N. M2
[1] Science and Technology Center of Microelectronics and Submicrometer Heterostructures, RAS, St. Petersburg 194021, Russian Federation
[2] Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russian Federation - Titulo de la conferencia
- Proceedings of 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
- Nombre de la conferencia
- ICCGE-17 International Conference on Crystal Growth and Epitaxy (17 ; Warsaw 2013-08-11)
- Autor ( monografía)
- SANGWAL, Keshra (Editor); GILLE, Peter (Editor); MILLER, Wolfram (Editor); TALIK, Ewa (Editor)
Polish Society for Crystal Growth (PTWK), Warsaw, Poland (Organiser of meeting)
Deutsche Gesellschaft fuer Kristallwachstum undKristallzuechtung (DGKK), Germany (Organiser of meeting)
University of Warsaw, Warsaw, Poland (Organiser of meeting)
Polish Academy od Science (PAN), Institute of High Pressure Physics (IWC), Poland (Organiser of meeting)
Polish Academy od Science (PAN), Institute of Physics (IF), Poland (Organiser of meeting)
Institute of Electronic Materials Technology (ITME), Warsaw, Poland (Organiser of meeting) - Fuente
Journal of crystal growth. 2014, Vol 401, pp 302-304, 3 p ; ref : 12 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Campo Científico
- Crystallography; Geology; Metallurgy, welding
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Conference Paper
- Idioma
- Russian
- Palabra clave de autor
- A1. Nanostructures B1. Nitrides B2. Semiconducting III-V materials B3. Light emitting diodes
- Palabra clave (fr)
- Bande interdite Bruit basse fréquence Composé III-V Diode électroluminescente Dispositif optoélectronique Distribution courant Défaut ponctuel Défaut étendu Nanostructure Nitrure Palladium Propriété électronique Recombinaison non radiative Semiconducteur III-V Spectrométrie dispersive 6172J 8560 8560J GaN InGaN
- Palabra clave (in)
- Energy gap 1/f noise III-V compound Light emitting diode Optoelectronic device Current distribution Point defect Extended defect Nanostructure Nitrides Palladium Electronic properties Non radiative recombination III-V semiconductors Dispersive spectrometry
- Palabra clave (es)
- Banda prohibida Ruido baja frecuencia Compuesto III-V Diodo electroluminescente Dispositivo optoelectrónico Distribución corriente Defecto puntual Defecto extendido Nanoestructura Nitruro Paladio Propiedad electrónica Recombinación no radiativa Espectrometría dispersiva
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72J Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Disciplina
- Electronics Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 28765991
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2013.11.097 
https://dx.doi.org/10.1016/j.jcrysgro.2013.11.097
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