Behavior of defects in a-plane GaN films grown by low-angle-incidence microchannel epitaxy (LAIMCE)

Autor

KUWANO, Noriyuki¹ ; RYU, Yuki² ; MITSUHARA, Masatoshi² ; LIN, Chia-Hung³ ; UCHIYAMA, Shota³ ; MARUYAMA, Takahiro³ ; SUZUKI, Yohei³ ; NARITSUKA, Shigeya³
[1] Malaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia, Jalan Semarak, 54100 Kuala Lumpur, Malaysia
[2] Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga Koh-en, Kasuga, Fukuoka 816-8580, Japan
[3] Department of Materials Science and Engineering, Meijo University, 1-501 Shiogama-guchi, Tenpaku-ku, Nagoya 468-8502, Japan

Titulo de la conferencia

Proceedings of 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)

Nombre de la conferencia

ICCGE-17 International Conference on Crystal Growth and Epitaxy (17 ; Warsaw 2013-08-11)

Autor ( monografía)

SANGWAL, Keshra (Editor); GILLE, Peter (Editor); MILLER, Wolfram (Editor); TALIK, Ewa (Editor)
Polish Society for Crystal Growth (PTWK), Warsaw, Poland (Organiser of meeting)
Deutsche Gesellschaft fuer Kristallwachstum undKristallzuechtung (DGKK), Germany (Organiser of meeting)
University of Warsaw, Warsaw, Poland (Organiser of meeting)
Polish Academy od Science (PAN), Institute of High Pressure Physics (IWC), Poland (Organiser of meeting)
Polish Academy od Science (PAN), Institute of Physics (IF), Poland (Organiser of meeting)
Institute of Electronic Materials Technology (ITME), Warsaw, Poland (Organiser of meeting)

Fuente

Journal of crystal growth. 2014, Vol 401, pp 409-413, 5 p ; ref : 22 ref

CODEN

JCRGAE

ISSN

0022-0248

Campo Científico

Crystallography; Geology; Metallurgy, welding

Editor

Elsevier, Amsterdam

País de la publicación

Netherlands

Tipo de documento

Conference Paper

Idioma

English

Palabra clave de autor

A1. Defects A3. Metalorganic molecular beam epitaxy A3. Selective epitaxy B1. Nitride B2. Semiconducting gallium compound

Palabra clave (fr)

Angle incidence Composé III-V Composé du gallium Couche mince Densité défaut Diagramme diffraction Diffraction électron Dislocation filetée Dislocation imparfaite Défaut empilement Epitaxie jet moléculaire Flexion Microscopie électronique transmission Microstructure Mécanisme croissance Méthode MOMBE Nitrure Saphir Semiconducteur III-V 6114L 6172L 6172N 8115H GaN Substrat GaN Substrat saphir

Palabra clave (in)

Incidence angle III-V compound Gallium compounds Thin films Defect density Diffraction pattern Electron diffraction Threading dislocation Partial dislocation Stacking faults Molecular beam epitaxy Bending Transmission electron microscopy Microstructure Growth mechanism MOMBE method Nitrides Sapphire III-V semiconductors

Palabra clave (es)

Compuesto III-V Densidad defecto Diagrama difracción Dislocación aterrajada Dislocación imperfecta Mecanismo crecimiento Método MOMBE

Clasificación

Pascal

001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A14 Electron diffraction and scattering / 001B60A14L Convergent-beam electron diffraction, selected-area electron diffraction, nanodiffraction

Pascal

001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72L Linear defects: dislocations, disclinations

Pascal

001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72N Stacking faults and other planar or extended defects

Pascal

001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy

Disciplina

Physics and materials science Physics of condensed state : structure, mechanical and thermal properties

Procedencia

Inist-CNRS

Base de datos

PASCAL

Identificador INIST

28766015

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