Molecular beam epitaxial growth of GaSb/GaAs quantum dots on Ge substrates
- Author
- KUNRUGSA, Maetee1 ; KIRAVITTAYA, Suwit2 ; SOPITPAN, Suwat3 ; RATANATHAMMAPHAN, Somchai1 ; PANYAKEOW, Somsak1
[1] The Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkom University, Phayathai Road, Patumwan, Bangkok 10330, Thailand
[2] Department of Electrical and Computer Engineering, Faculty of Engineering, Naresuan University, Phitsanulok 65000, Thailand
[3] Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center, Chachoengsao 24000, Thailand - Conference title
- Proceedings of 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
- Conference name
- ICCGE-17 International Conference on Crystal Growth and Epitaxy (17 ; Warsaw 2013-08-11)
- Author (monograph)
- SANGWAL, Keshra (Editor); GILLE, Peter (Editor); MILLER, Wolfram (Editor); TALIK, Ewa (Editor)
Polish Society for Crystal Growth (PTWK), Warsaw, Poland (Organiser of meeting)
Deutsche Gesellschaft fuer Kristallwachstum undKristallzuechtung (DGKK), Germany (Organiser of meeting)
University of Warsaw, Warsaw, Poland (Organiser of meeting)
Polish Academy od Science (PAN), Institute of High Pressure Physics (IWC), Poland (Organiser of meeting)
Polish Academy od Science (PAN), Institute of Physics (IF), Poland (Organiser of meeting)
Institute of Electronic Materials Technology (ITME), Warsaw, Poland (Organiser of meeting) - Source
Journal of crystal growth. 2014, Vol 401, pp 441-444, 4 p ; ref : 16 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- A1. GaAs anti-phase domain A1. Ge substrates A3. GaSb A3. Quantum dots
- Keyword (fr)
- Analyse structurale Analyse surface Arséniure d'indium Arséniure de gallium Autoassemblage Composé III-V Epitaxie jet moléculaire Mécanisme croissance Nanomatériau Photoluminescence Point quantique Semiconducteur III-V Semiconducteur polaire Structure cristalline 6166 8107 8107T 8115H Substrat GaAs Substrat germanium
- Keyword (en)
- Structural analysis Surface analysis Indium arsenides Gallium arsenides Self-assembly III-V compound Molecular beam epitaxy Growth mechanism Nanostructured materials Photoluminescence Quantum dots III-V semiconductors Polar semiconductors Crystal structure
- Keyword (es)
- Análisis estructural Compuesto III-V Mecanismo crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A66 Structure of specific crystalline solids
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28766020
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2014.02.048 
https://dx.doi.org/10.1016/j.jcrysgro.2014.02.048
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