Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
- Autor
- GOGOVA, D1 ; WAGNER, G1 ; BALDINI, M1 ; SCHMIDBAUER, M1 ; IRMSCHER, K1 ; SCHEWSKI, R1 ; GALAZKA, Z1 ; ALBRECHT, M1 ; FORNARI, R1
[1] Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany - Titulo de la conferencia
- Proceedings of 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
- Nombre de la conferencia
- ICCGE-17 International Conference on Crystal Growth and Epitaxy (17 ; Warsaw 2013-08-11)
- Autor ( monografía)
- SANGWAL, Keshra (Editor); GILLE, Peter (Editor); MILLER, Wolfram (Editor); TALIK, Ewa (Editor)
Polish Society for Crystal Growth (PTWK), Warsaw, Poland (Organiser of meeting)
Deutsche Gesellschaft fuer Kristallwachstum undKristallzuechtung (DGKK), Germany (Organiser of meeting)
University of Warsaw, Warsaw, Poland (Organiser of meeting)
Polish Academy od Science (PAN), Institute of High Pressure Physics (IWC), Poland (Organiser of meeting)
Polish Academy od Science (PAN), Institute of Physics (IF), Poland (Organiser of meeting)
Institute of Electronic Materials Technology (ITME), Warsaw, Poland (Organiser of meeting) - Fuente
Journal of crystal growth. 2014, Vol 401, pp 665-669, 5 p ; ref : 13 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Campo Científico
- Crystallography; Geology; Metallurgy, welding
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Conference Paper
- Idioma
- English
- Palabra clave de autor
- A1. High resolution X-ray diffraction A3. Organometallic vapor phase epitaxy B1. Oxides B2. Semiconducting materials
- Palabra clave (fr)
- Addition silicium Condition opératoire Couche mince Couche oxyde Densité dislocation Diffraction RX Défaut cristallin Défaut empilement Epitaxie phase vapeur Homoépitaxie Matériau dopé Microscopie électronique transmission Méthode MOVPE Phase bêta Plan expérience Propriété électrique 6172N 8115K Ga2O3 Substrat Al2O3 Substrat Ga2O3
- Palabra clave (in)
- Silicon additions Operating conditions Thin films Oxide layer Dislocation density XRD Crystal defects Stacking faults VPE Homoepitaxy Doped materials Transmission electron microscopy MOVPE method Beta phase Experimental design Electrical properties
- Palabra clave (es)
- Condición operatoria Capa óxido Homoepitaxia Método MOVPE Fase beta
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72N Stacking faults and other planar or extended defects
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Disciplina
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 28766070
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2013.11.056 
https://dx.doi.org/10.1016/j.jcrysgro.2013.11.056
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