GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 μm
- Author
- RICHTER, Johannes1 ; STRASSNER, Johannes1 ; LOEBER, Thomas H1 ; FOUCKHARDT, Henning1 ; NOWOZIN, Tobias2 ; BONATO, Leo2 ; BIMBERG, Dieter2 ; BRAAM, Daniel3 ; LORKE, Axel3
[1] Research Group Integrated Optoelectronics and Microoptics (IOE), Physics Department, Kaiserslautern University of Technology, PO Box 3049, 67653 Kaiserslautern, Germany
[2] Institute of Solid State Physics, Technical University of Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
[3] Fakultät für Physik and CENIDE, Universität Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg, Germany - Source
Journal of crystal growth. 2014, Vol 404, pp 48-53, 6 p ; ref : 31 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- A1. Nanostructures A3. Molecular beam epitaxy A3. Quantum dots B1. Nanomaterials B2. Semiconducting III-V materials B3. Laser diodes
- Keyword (fr)
- Composé III-V Couche épitaxique Coupe transversale DLTS Densité élevée Densité énergie Diode laser Distribution densité Epitaxie jet moléculaire Génération porteur charge Haute énergie Laser semiconducteur Logiciel Microscopie force atomique Mécanisme croissance Méthode croissance Stranski-Krastanov Méthode fondant Nanomatériau Nanostructure Photoluminescence Point quantique Pression partielle Section efficace Semiconducteur III-V Simulation numérique 8107 8107T 8110A 8115H Substrat GaAs
- Keyword (en)
- III-V compound Epitaxial layers Cross section DLTS High density Energy density Laser diodes Density distribution Molecular beam epitaxy Charge carrier generation High energy Semiconductor lasers Computer software Atomic force microscopy Growth mechanism Stranski-Krastanov growth method Flux growth Nanostructured materials Nanostructures Photoluminescence Quantum dots Partial pressure Cross sections III-V semiconductors Digital simulation
- Keyword (es)
- Compuesto III-V Corte transverso Densidad elevada Distribución densidad Generación portador carga Alta energía Mecanismo crecimiento Método crecimiento Stranski-Krastanov Método fundente
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28785166
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2014.06.045 
https://dx.doi.org/10.1016/j.jcrysgro.2014.06.045
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