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Characterization of homoepitaxial β-Ga2O3 films prepared by metal-organic chemical vapor deposition

Author
XUEJIAN DU1 ; WEI MI1 ; CAINA LUAN1 ; ZHAO LI1 ; CHANGTAI XIA2 ; JIN MA1
[1] School of Physics, Shandong University, Jinan 250100, China
[2] Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Source

Journal of crystal growth. 2014, Vol 404, pp 75-79, 5 p ; ref : 19 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
A1. X-ray diffraction A3. Metal-organic chemical vapor deposition B1. Oxides B2. Semiconducting materials
Keyword (fr)
Bande interdite photonique Couche mince Diffraction RX Dépendance température Effet température Facteur transmission Homoépitaxie Mécanisme croissance Méthode MOCVD Oxyde de gallium Phase bêta Propriété optique Réseau monoclinique Spectrométrie Raman Structure cristalline 6166 7820 8110A 8115G Ga2O3 Substrat Ga2O3
Keyword (en)
Photonic band gap Thin films XRD Temperature dependence Temperature effects Transmittance Homoepitaxy Growth mechanism MOCVD Gallium oxide Beta phase Optical properties Monoclinic lattices Raman spectroscopy Crystal structure
Keyword (es)
Factor transmisión Homoepitaxia Mecanismo crecimiento Galio óxido Fase beta
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A66 Structure of specific crystalline solids

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H20 Optical properties of bulk materials and thin films

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
28785171

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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