Ammonothermal growth of GaN on a self-nucleated GaN seed crystal
- Autor
- QUANXI BAO1 3 ; SAITO, Makoto1 2 ; HAZU, Kouji1 ; KAGAMITANI, Yuji2 ; KURIMOTO, Kouhei3 ; TOMIDA, Daisuke1 ; KUN QIAO1 ; ISHIGURO, Tohru1 ; YOKOYAMA, Chiaki1 ; CHICHIBU, Shigefusa F1
[1] Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
[2] Mitsubishi Chemical Corp., 1000 Higashi-Mamiana, Ushiku 300-1295, Ibaraki, Japan
[3] Japan Steel Works Ltd., 11-1 Osaki 1-chome, Shinagawa-ku, Tokyo 141-0032, Japan - Fuente
Journal of crystal growth. 2014, Vol 404, pp 168-171, 4 p ; ref : 12 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Campo Científico
- Crystallography; Geology; Metallurgy, welding
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- Ammonothermal method B1. GaN NH4F Self-nucleated seed
- Palabra clave (fr)
- Composé III-V Croissance cristalline Epitaxie phase vapeur Germe cristallin Hydrure Mesure température Mécanisme croissance Perfection cristalline Photoluminescence Polycristal Recristallisation Semiconducteur III-V 7855 8110 8110A 8115K GaN NH4F Substrat GaN
- Palabra clave (in)
- III-V compound Crystal growth VPE Crystal seeds Hydrides Temperature measurement Growth mechanism Crystal perfection Photoluminescence Polycrystals Recrystallization III-V semiconductors
- Palabra clave (es)
- Compuesto III-V Mecanismo crecimiento Perfección cristalina
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Disciplina
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 28785186
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2014.06.052 
https://dx.doi.org/10.1016/j.jcrysgro.2014.06.052
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