Kinetic Monte Carlo simulation of low-pressure chemical vapor deposition of silicon nitride: Impact of gas flow rate and temperature on silicon cluster size and density
- Author
- BOUHADICHE, Adil1 2 ; BOURIDAH, Hachemi1 2 ; BOUTAOUI, Noureddine2
[1] Département d'Electronique, Université de Jijel, BP98 Ouled Aissa, Jijel 18000, Algeria
[2] Laboratoire d'Etude des Matériaux, Université de Jijel, BP98 Ouled Aissa, Jijel 18000, Algeria - Source
Materials science in semiconductor processing. 2014, Vol 26, pp 555-560, 6 p ; ref : 30 ref
- ISSN
- 1369-8001
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- Cluster size Kinetic Monte Carlo SiNx deposit phase Silicon cluster
- Keyword (fr)
- Ammoniac Basse pression Cinétique Couche mince Dépôt chimique phase vapeur Ecoulement gaz Fabrication microélectronique Matériau amorphe Méthode Monte Carlo Nitrure de silicium Procédé dépôt Procédé fabrication Silicium Simulation numérique 8115G 8540H SiNx
- Keyword (en)
- Ammonia Low pressure Kinetics Thin films CVD Gas flow Microelectronic fabrication Amorphous material Monte Carlo methods Silicon nitride Deposition process Manufacturing processes Silicon Digital simulation
- Keyword (es)
- Fabricación microeléctrica Material amorfo Silicio nitruro Procedimiento revestimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28885764
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mssp.2014.05.050 
https://dx.doi.org/10.1016/j.mssp.2014.05.050
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