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Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition

Author
KUN ZHOU1 2 3 ; IKEDA, Masao1 3 ; HUI YANG1 2 3 ; JIANPING LIU1 3 ; SHUMING ZHANG1 3 ; ZENGCHENG LI1 2 3 ; MEIXIN FENG1 2 3 ; AIQIN TIAN1 3 ; PENGYAN WEN1 3 ; DEYAO LI1 3 ; LIQUN ZHANG1 3
[1] Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
[2] State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
[3] Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, China
Source

Journal of crystal growth. 2015, Vol 409, pp 51-55, 5 p ; ref : 15 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
Growth models Metalorganic vapor phase epitaxy Nitrides Semiconducting III-V materials
Keyword (fr)
Basse pression Composé III-V Couche contrainte Diffusion(transport) Dépendance température Désorption Epitaxie phase vapeur Etude théorique Indium Mécanisme croissance Méthode MOCVD Méthode MOVPE Nitrure Semiconducteur III-V Taux croissance 6630 8110A 8115G 8115K GaN InGaN Substrat GaN Substrat saphir
Keyword (en)
Low pressure III-V compound Strained layer Diffusion Temperature dependence Desorption VPE Theoretical study Indium Growth mechanism MOCVD MOVPE method Nitrides III-V semiconductors Growth rate
Keyword (es)
Compuesto III-V Capa forzada Mecanismo crecimiento Método MOVPE
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F30 Diffusion in solids

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase

Discipline
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
28928191

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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