Evolution of the surface morphology of AlN epitaxial film by HVPE
- Autor
- XIAOJING GONG1 ; KE XU1 2 ; JUN HUANG1 ; TING LIU1 ; GUOQIANG REN1 2 ; JIANFENG WANG1 2 ; JICAI ZHANG1 2
[1] Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou, China
[2] Suzhou Nanowin Science and Technology Co. Ltd., Xinghu Street 218, 215123 Suzhou, China - Fuente
Journal of crystal growth. 2015, Vol 409, pp 100-104, 5 p ; ref : 14 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Campo Científico
- Crystallography; Geology; Metallurgy, welding
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- A1. AFM A1. AlN A1. Surface morphology A3. HVPE
- Palabra clave (fr)
- Adatome Composé III-V Couche mince Couche épitaxique Densité dislocation Diffusion(transport) Dislocation coin Epitaxie phase vapeur Face cristalline Hydrure Microscopie force atomique Morphologie surface Mécanisme croissance Nitrure Réseau hexagonal Semiconducteur III-V Structure dislocation Structure surface 6630 8110A 8115K
- Palabra clave (in)
- Adatoms III-V compound Thin films Epitaxial layers Dislocation density Diffusion Edge dislocations VPE Crystal faces Hydrides Atomic force microscopy Surface morphology Growth mechanism Nitrides Hexagonal lattices III-V semiconductors Dislocation structure Surface structure
- Palabra clave (es)
- Compuesto III-V Mecanismo crecimiento
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F30 Diffusion in solids
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Disciplina
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 28928200
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2014.10.012 
https://dx.doi.org/10.1016/j.jcrysgro.2014.10.012
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