Total-ionizing-dose effects and reliability of carbon nanotube FET devices
- Author
- CHER XUAN ZHANG1 ; EN XIA ZHANG1 ; FLEETWOOD, Daniel M1 ; ALLES, Michael L1 ; SCHRIMPF, Ronald D1 ; RUTHERGLEN, Chris2 ; GALATSIS, Kosmas2 3
[1] Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, United States
[2] Aneeve LLC, Los Angeles, CA 90095, United States
[3] Material Science and Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, United States - Source
Microelectronics and reliability. 2014, Vol 54, Num 11, pp 2355-2359, 5 p ; ref : 30 ref
- CODEN
- MCRLAS
- ISSN
- 0026-2714
- Scientific domain
- Electronics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Circuit intégré Contrainte électrique Courant drain Cyclage Dispositif nanotube Dégradation Effet on off Endommagement Fiabilité Irradiation RX Mémoire non volatile Nanotube carbone Nanoélectronique Recuit Transistor effet champ 8107D
- Keyword (en)
- Integrated circuit Electric stress Drain current Cycling Nanotube devices Degradation On off effect Damaging Reliability X ray irradiation Non volatile memory Carbon nanotubes Nanoelectronics Annealing Field effect transistor
- Keyword (es)
- Circuito integrado Tensión eléctrica Corriente dren Ciclaje Degradación Efecto on off Deterioración Fiabilidad Irradiación RX Memoria no volátil Nanoelectrónica Recocido Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07D Nanotubes
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28945755
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.microrel.2014.05.011 
https://dx.doi.org/10.1016/j.microrel.2014.05.011
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