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Total-ionizing-dose effects and reliability of carbon nanotube FET devices

Author
CHER XUAN ZHANG1 ; EN XIA ZHANG1 ; FLEETWOOD, Daniel M1 ; ALLES, Michael L1 ; SCHRIMPF, Ronald D1 ; RUTHERGLEN, Chris2 ; GALATSIS, Kosmas2 3
[1] Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, United States
[2] Aneeve LLC, Los Angeles, CA 90095, United States
[3] Material Science and Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, United States
Source

Microelectronics and reliability. 2014, Vol 54, Num 11, pp 2355-2359, 5 p ; ref : 30 ref

CODEN
MCRLAS
ISSN
0026-2714
Scientific domain
Electronics
Publisher
Elsevier, Kidlington
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Circuit intégré Contrainte électrique Courant drain Cyclage Dispositif nanotube Dégradation Effet on off Endommagement Fiabilité Irradiation RX Mémoire non volatile Nanotube carbone Nanoélectronique Recuit Transistor effet champ 8107D
Keyword (en)
Integrated circuit Electric stress Drain current Cycling Nanotube devices Degradation On off effect Damaging Reliability X ray irradiation Non volatile memory Carbon nanotubes Nanoelectronics Annealing Field effect transistor
Keyword (es)
Circuito integrado Tensión eléctrica Corriente dren Ciclaje Degradación Efecto on off Deterioración Fiabilidad Irradiación RX Memoria no volátil Nanoelectrónica Recocido Transistor efecto campo
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07D Nanotubes

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics

Discipline
Electronics Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
28945755

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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