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Study of free air ball formation in Ag-8Au-3Pd alloy wire bonding

Author
RUI GUO1 ; LIMING GAO1 ; DALI MAO1 ; MING LI1 ; XU WANG2 ; ZHONG LV2 ; HOPE CHIU2
[1] State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
[2] Packaging RnD and Advanced MFG Engineering, SanDisk Semiconductor (Shanghai) Co., Ltd, Shanghai 200241, China
Source

Microelectronics and reliability. 2014, Vol 54, Num 11, pp 2550-2554, 5 p ; ref : 12 ref

CODEN
MCRLAS
ISSN
0026-2714
Scientific domain
Electronics
Publisher
Elsevier, Kidlington
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Circuit intégré Ecran électromagnétique Gestion température packaging électronique Haute tension Interconnexion Microcâblage Or Oxydation Refroidissement Solidification Spectrométrie Auger Système refroidissement Tension superficielle
Keyword (en)
Integrated circuit Electromagnetic shielding Thermal management (packaging) High voltage Interconnection Wire bonding Gold Oxidation Cooling Solidification Auger electron spectrometry Cooling system Surface tension
Keyword (es)
Circuito integrado Pantalla electromagnética Alta tensión Interconexión Unión por hilo Oro Oxidación Enfriamiento Solidificación Espectrometría Auger Sistema enfriamiento Tensión superficial
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
28945783

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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