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Tunable Transport Gap in Phosphorene

Author
DAS, Saptarshi1 ; WEI ZHANG2 ; DEMARTEAU, Marcel3 ; HOFFMANN, Axel2 ; DUBEY, Madan4 ; ROELOFS, Andreas1
[1] Center for Nanoscale Material, Argonne National Laboratory, Argonne, Illinois 60439, United States
[2] Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States
[3] Division of High Energy Physics, Argonne National Laboratory, Argonne, Illinois 60439, United States
[4] US Army Research Laboratory, Adelphi, Maryland 20783, United States
Source

Nano letters (Print). 2014, Vol 14, Num 10, pp 5733-5739, 7 p ; ref : 24 ref

ISSN
1530-6984
Scientific domain
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
American Chemical Society, Washington, DC
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Asymétrie Barrière Schottky Couche monomoléculaire Densité porteur charge Dépendance température Epaisseur couche Hauteur barrière Loi échelle Mobilité trou Modèle mathématique Niveau Fermi Oxyde grille Structure bande Structure électronique Transistor effet champ 7322 8530P 8530T
Keyword (en)
Asymmetry Schottky barrier Monolayer Charge carrier density Temperature dependence Layer thickness Barrier height Scaling law Hole mobility Mathematical model Fermi level Gate oxide Band structure Electronic structure Field effect transistor
Keyword (es)
Asimetría Barrera Schottky Capa monomolecular Concentración portador carga Espesor capa Altura barrera Ley escala Movilidad agujero Modelo matemático Nivel Fermi Oxido rejilla Estructura banda Estructura electrónica Transistor efecto campo
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C22 Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
28986412

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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