A novel organic electrical memory device based on the metallofullerene-grafted polymer (Gd@C82-PVK)
- Author
- DONGMEI YUE2 ; RONGLI CUI1 ; BAOYUN SUN1 ; XIAOLIN RUAN2 ; HUAN HUANG1 ; XIHONG GUO1 ; ZHENZHEN WANG1 ; XINGFA GAO1 ; SHANGYUAN YANG1 ; JINQUAN DONG1 ; FUTING YI3
[1] CAS Key Lab for Biomedical Effects of Nanomaterials and Nanosafety, Institute of High Energy Physics, Chinese Academy of Sciences(CAS), Beijing 100049, China
[2] Beijing University of Chemical Technology, Beijing 100029, China
[3] Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, CAS, Beijing 100049, China - Source
Organic electronics (Print). 2014, Vol 15, Num 12, pp 3482-3486, 5 p ; ref : 31 ref
- ISSN
- 1566-1199
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Charge transfer DFT calculation Metallofullerene Nanoparticle Organic memory PVK
- Keyword (fr)
- Addition étain Basse tension Caractéristique courant tension Carbazole(vinyl) polymère Centre accepteur Circuit intégré Commutation électrique Dispositif à mémoire Donneur électron Dérivé du carbazole Effet mémoire Effet on off Electronique organique Gadolinium Matériau dopé Mémoire non volatile Méthode fonctionnelle densité Nanoparticule Oxyde d'indium Piégeage porteur charge Polymère greffé Produit nouveau Réécriture Structure sandwich Transfert charge Transformation Fourier discrète 7115M ITO
- Keyword (en)
- Tin addition Low voltage Voltage current curve Carbazole(vinyl) polymer Acceptor center Integrated circuit Electrical switching Memory devices Electron donor Carbazole derivatives Memory effect On off effect Organic electronics Gadolinium Doped materials Non volatile memory Density functional method Nanoparticle Indium oxide Charge carrier trapping Graft polymers New product Rewriting Sandwich structure Charge transfer Discrete Fourier transformation
- Keyword (es)
- Adición estaño Baja tensión Característica corriente tensión Carbazol(vinil) polímero Centro aceptor Circuito integrado Conmutación eléctrica Donador electrón Carbazol derivado Efecto memoria Efecto on off Electrónica orgánica Gadolinio Memoria no volátil Nanopartícula Indio óxido Captura portador carga Producto nuevo Reescritura Estructura sandwich Transferencia carga Transformación Fourier discreta
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07W Nanopowders
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03I Storage and reproduction of information / 001D03I02 Magnetic and optical mass memories
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 29004401
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.orgel.2014.09.041 
https://dx.doi.org/10.1016/j.orgel.2014.09.041
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