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Study of thermally activated reaction between Mn and GaAs(111) surface

Author
SOARES, M. V1 ; JURCA, H. F1 ; ZARPELLON, J1 ; VARALDA, J1 ; SCHREINER, W. H1 ; MOSCA, D. H1
[1] Laboratório de Superficies e Interfaces, Universidade Federal do Paraná, C. P. 19044, 81531-990 Curitiba, PR, Brazil
Source

Thin solid films. 2014, Vol 570, pp 57-62, 6 p ; a ; ref : 40 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
Mn-based compounds Solid state reactions Surface chemistry
Keyword (fr)
Arséniure de gallium Chimie surface Composé III-V Couche mince Diffraction RX Effet température Epitaxie jet moléculaire RHEED Réaction état solide Réactivité chimique Semiconducteur III-V Spectre photoélectron RX Vide poussé 8105E 8105H 8115H As Ga Mn Ga1-xMnxAs GaMnAs MnAs
Keyword (en)
Gallium arsenides Surface chemistry III-V compound Thin films XRD Temperature effects Molecular beam epitaxy RHEED Solid state reaction Chemical reactivity III-V semiconductors X-ray photoelectron spectra High vacuum
Keyword (es)
Compuesto III-V Reacción estado sólido Reactividad química
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
29025733

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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