A Facile One-Step Approach to Epitaxially Grow Periodic Arrays of InGaAs/GaAs Nanobars by Metal—Organic Chemical Vapor Deposition: From Site Control to Size Control
- Author
- BENZHONG WANG1 ; HAN, Ming-Yong1 ; CHUA, Soo-Jin1
[1] Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602, Singapore - Source
Crystal growth & design. 2014, Vol 14, Num 12, pp 6550-6556, 7 p ; ref : 40 ref
- ISSN
- 1528-7483
- Scientific domain
- Crystallography
- Publisher
- American Chemical Society, Washington,DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Arséniure de gallium Autoassemblage Bicouche Commande dimension Composé III-V Couche mince Couche épitaxique Effet dimensionnel Epitaxie Gravure sèche Mécanisme croissance Méthode MOCVD Nanolithographie Nanosphère Nanostructure Optoélectronique intégrée Photolithographie Polymère Réactif attaque Réseau(arrangement) Semiconducteur III-V Silicium 8110A 8115G 8116D 8116N Nanobarre Substrat GaAs Substrat silicium
- Keyword (en)
- Gallium arsenides Self-assembly Bilayers Size control III-V compound Thin films Epitaxial layers Size effect Epitaxy Dry etching Growth mechanism MOCVD Nanolithography Nanosphere Nanostructures Integrated optoelectronics Photolithography Polymers Etching reagent Arrays III-V semiconductors Silicon Nanobar
- Keyword (es)
- Compuesto III-V Grabado seco Mecanismo crecimiento Nanosfera Reactivo ataque Nanobarra
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication / 001B80A16D Self-assembly
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication / 001B80A16N Nanolithography
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 29034020
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1021/cg5014494 
https://dx.doi.org/10.1021/cg5014494
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/cg5014494\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:166:\"A Facile One-Step Approach to Epitaxially Grow Periodic Arrays of InGaAs\/GaAs Nanobars by Metal\u2014Organic Chemical Vapor Deposition: From Site Control to Size Control\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Crystal growth & design\";s:9:\"\u0000*\u0000stitle\";s:17:\"Cryst. growth des\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:2:\"14\";s:8:\"\u0000*\u0000issue\";s:2:\"12\";s:8:\"\u0000*\u0000spage\";s:4:\"6550\";s:8:\"\u0000*\u0000epage\";s:4:\"6556\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1528-7483\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:13:\"BENZHONG WANG\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:14:\"HAN, Ming-Yong\";i:1;s:13:\"CHUA, Soo-Jin\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:166:\"A Facile One-Step Approach to Epitaxially Grow Periodic Arrays of InGaAs\/GaAs Nanobars by Metal\u2014Organic Chemical Vapor Deposition: From Site Control to Size Control\";s:8:\"\u0000*\u0000place\";s:13:\"Washington,DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/cg5014494\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:166:\"A Facile One-Step Approach to Epitaxially Grow Periodic Arrays of InGaAs\/GaAs Nanobars by Metal\u2014Organic Chemical Vapor Deposition: From Site Control to Size Control\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Crystal growth & design\";s:9:\"\u0000*\u0000stitle\";s:17:\"Cryst. growth des\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:2:\"14\";s:8:\"\u0000*\u0000issue\";s:2:\"12\";s:8:\"\u0000*\u0000spage\";s:4:\"6550\";s:8:\"\u0000*\u0000epage\";s:4:\"6556\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1528-7483\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:13:\"BENZHONG WANG\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:14:\"HAN, Ming-Yong\";i:1;s:13:\"CHUA, Soo-Jin\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:166:\"A Facile One-Step Approach to Epitaxially Grow Periodic Arrays of InGaAs\/GaAs Nanobars by Metal\u2014Organic Chemical Vapor Deposition: From Site Control to Size Control\";s:8:\"\u0000*\u0000place\";s:13:\"Washington,DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/cg5014494\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/cg5014494\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:166:\"A Facile One-Step Approach to Epitaxially Grow Periodic Arrays of InGaAs\/GaAs Nanobars by Metal\u2014Organic Chemical Vapor Deposition: From Site Control to Size Control\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Crystal growth & design\";s:9:\"\u0000*\u0000stitle\";s:17:\"Cryst. growth des\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:2:\"14\";s:8:\"\u0000*\u0000issue\";s:2:\"12\";s:8:\"\u0000*\u0000spage\";s:4:\"6550\";s:8:\"\u0000*\u0000epage\";s:4:\"6556\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1528-7483\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:13:\"BENZHONG WANG\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:14:\"HAN, Ming-Yong\";i:1;s:13:\"CHUA, Soo-Jin\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:166:\"A Facile One-Step Approach to Epitaxially Grow Periodic Arrays of InGaAs\/GaAs Nanobars by Metal\u2014Organic Chemical Vapor Deposition: From Site Control to Size Control\";s:8:\"\u0000*\u0000place\";s:13:\"Washington,DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/cg5014494\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:166:\"A Facile One-Step Approach to Epitaxially Grow Periodic Arrays of InGaAs\/GaAs Nanobars by Metal\u2014Organic Chemical Vapor Deposition: From Site Control to Size Control\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Crystal growth & design\";s:9:\"\u0000*\u0000stitle\";s:17:\"Cryst. growth des\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:2:\"14\";s:8:\"\u0000*\u0000issue\";s:2:\"12\";s:8:\"\u0000*\u0000spage\";s:4:\"6550\";s:8:\"\u0000*\u0000epage\";s:4:\"6556\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1528-7483\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:13:\"BENZHONG WANG\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:14:\"HAN, Ming-Yong\";i:1;s:13:\"CHUA, Soo-Jin\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:166:\"A Facile One-Step Approach to Epitaxially Grow Periodic Arrays of InGaAs\/GaAs Nanobars by Metal\u2014Organic Chemical Vapor Deposition: From Site Control to Size Control\";s:8:\"\u0000*\u0000place\";s:13:\"Washington,DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/cg5014494\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:166:\"A Facile One-Step Approach to Epitaxially Grow Periodic Arrays of InGaAs\/GaAs Nanobars by Metal\u2014Organic Chemical Vapor Deposition: From Site Control to Size Control\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Crystal growth & design\";s:9:\"\u0000*\u0000stitle\";s:17:\"Cryst. growth des\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:2:\"14\";s:8:\"\u0000*\u0000issue\";s:2:\"12\";s:8:\"\u0000*\u0000spage\";s:4:\"6550\";s:8:\"\u0000*\u0000epage\";s:4:\"6556\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1528-7483\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:13:\"BENZHONG WANG\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:14:\"HAN, Ming-Yong\";i:1;s:13:\"CHUA, Soo-Jin\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:166:\"A Facile One-Step Approach to Epitaxially Grow Periodic Arrays of InGaAs\/GaAs Nanobars by Metal\u2014Organic Chemical Vapor Deposition: From Site Control to Size Control\";s:8:\"\u0000*\u0000place\";s:13:\"Washington,DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
