Low temperature growth and planar doping of ZnSe in a plasma-stimulated LP-MOVPE system
- Author
- TAUDT, W; WACHTENDORF, B; SAUERLÄNDER, F; HAMADEH, H; LAMPE, S; HEUKEN, M
RWTH Aachen, Inst. Halbleitertech., 52056 Aachen, Germany - Conference title
- Biennial Workshop on organometallic vapor phase epitaxy
- Conference name
- Biennial Workshop on organometallic vapor phase epitaxy (7 ; Ft. Myers FL 1995-04-02)
- Author (monograph)
- GASKILL, D. K (Editor); HERSEE, S. D (Editor)
Air Products and Chemicals (Funder/Sponsor)
Aixtron (Funder/Sponsor)
Akzo Nobel Chemicals (Funder/Sponsor)
EMCORE (Funder/Sponsor)
Epitaxial Products Internationals, International (Funder/Sponsor)
MCP Wafer Technology (Funder/Sponsor)
MKS Instruments (Funder/Sponsor)
Morton International, International (Funder/Sponsor)
NIMTEC/Japan Energy, Japan (Funder/Sponsor)
Rockwell International, International (Funder/Sponsor) - Source
Journal of electronic materials. 1995, Vol 24, Num 11, pp 1671-1675 ; ref : 16 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Addition azote Basse pression Basse température Composé binaire Couche épitaxique Croissance cristalline en phase vapeur Dopage plan Etude expérimentale Matériau semiconducteur Plasma VPE Zinc séléniure Se Zn ZnSe:N Composé minéral Composé organométallique Métal transition composé
- Keyword (en)
- Nitrogen additions Low pressure Low temperature Binary compounds Epitaxial layers Crystal growth from vapors Planar doping Experimental study Semiconductor materials Plasma VPE Zinc selenides Inorganic compounds Organometallic compounds Transition element compounds
- Keyword (es)
- Baja temperatura Doping plano
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55L Defects and impurities: doping, implantation, distribution, concentration, etc
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2903863
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF02676830 
https://dx.doi.org/10.1007/BF02676830
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